EM6M2T2R Rohm Semiconductor, EM6M2T2R Datasheet - Page 6

• Manufacturer Part Number: EM6M2T2R
• Description: MOSFET N/P-CH 20V 200MA EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EM6M2T2R

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1 Ohm @ 200mA, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 25pF @ 10V
• Power - Max: 120mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

○
EM6M2
c
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2009 ROHM Co., Ltd. All rights reserved.
1.0
0.1
1000
100
0.01
10
1
V
Pulsed
0.01
DS
= -10V
Fig.10 Forward Transfer Admittance
Fig.13 Switching Characteristics
t
r
vs. Drain Current
DRAIN-CURRENT : -I
DRAIN-CURRENT : -I
t
t
d
d
(off)
(on)
0.1
0.1
t
f
Ta=-25°C
Ta=25°C
Ta=75°C
Ta=125°C
D
[A]
D
Ta=25°C
V
V
R
Pulsed
[A]
DD
GS
G
=10Ω
=-4.5V
= -10V
1
1
0.01
0.1
1
0
V
Pulsed
5
4
3
2
1
0
GS
0
=0V
SOURCE-DRAIN VOLTAGE : -V
Fig.11 Reverse Drain Current
Fig.14 Dynamic Input Characteristics
TOTAL GATE CHARGE : Qg [nC]
vs. Sourse-Drain Voltage
0.5
0.5
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
6/7
1
Ta=25°C
V
I
R
Pulsed
D
SD
DD
= -0.2A
G
=10Ω
[V]
= -10V
1.5
1.5
1000
100
10
1
5
4
3
2
1
0
0.01
0
Ta=25°C
f=1MHz
V
GS
Fig.12 Static Drain-Source On-State
=0V
Coss
Fig.15 Typical Capacitance
GATE-SOURCE VOLTAGE : -V
DRAIN-SOURCE VOLTAGE : -V
2
Resistance vs. Gate Source Voltage
0.1
I
vs. Drain-Source Voltage
D
I
= -0.2A
D
Crss
= -0.01A
4
1
6
Ciss
10
Ta=25°C
Pulsed
8
GS
DS
[V]
[V]
10
2009.07 - Rev.A
100
Data Sheet