BSO211P H Infineon Technologies, BSO211P H Datasheet - Page 6

• Manufacturer Part Number: BSO211P H
• Description: MOSFET 2P-CH 20V 4A 8DSO
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO211P H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 67 mOhm @ 4.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1.2V @ 25µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1095pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Package: SO-8
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 67.0 mOhm
• Rds (on) (max) (@2.5v): 110.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.1.3
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
DS
=f(T
100
3
2
90
80
70
60
50
40
30
); V
0
-60
j
); I
GS
D
=0 V; f =1 MHz
=-4.6 A; V
-20
10
20
98 %
GS
typ
V
T
=-4.5 V
DS
j
[°C]
Ciss
Coss
Crss
[V]
60
20
100
140
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
1.6
1.4
1.2
0.8
0.6
0.4
0.2
10
10
10
=f(T
SD
1
0
-1
2
1
0
-60
)
0
j
); V
j
GS
-20
=V
0.5
150 °C
DS
20
; I
25 °C
D
=-25 µA
V
T
150°C 98%
SD
j
60
25 °C 98%
[°C]
1
[V]
100
1.5
BSO211P H
140
2010-02-10
180
2