BSO211P H Infineon Technologies, BSO211P H Datasheet - Page 6
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BSO211P H
Manufacturer Part Number
BSO211P H
Description
MOSFET 2P-CH 20V 4A 8DSO
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSO211P_H.pdf
(9 pages)
Specifications of BSO211P H
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
67 mOhm @ 4.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
1.2V @ 25µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
1095pF @ 15V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
DSO-8
Package
SO-8
Vds (max)
-20.0 V
Rds (on) (max) (@10v)
-
Rds (on) (max) (@4.5v)
67.0 mOhm
Rds (on) (max) (@2.5v)
110.0 mOhm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rev.1.3
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
DS
=f(T
100
3
2
90
80
70
60
50
40
30
); V
0
-60
j
); I
GS
D
=0 V; f =1 MHz
=-4.6 A; V
-20
10
20
98 %
GS
typ
V
T
=-4.5 V
DS
j
[°C]
Ciss
Coss
Crss
[V]
60
20
100
140
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
1.6
1.4
1.2
0.8
0.6
0.4
0.2
10
10
10
=f(T
SD
1
0
-1
2
1
0
-60
)
0
j
); V
j
GS
-20
=V
0.5
150 °C
DS
20
; I
25 °C
D
=-25 µA
V
T
150°C 98%
SD
j
60
25 °C 98%
[°C]
1
[V]
100
1.5
BSO211P H
140
2010-02-10
180
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