BSO207P Infineon Technologies, BSO207P Datasheet - Page 3

MOSFET DUAL P-CH 20V 5.7A 8-SOIC

BSO207P

Manufacturer Part Number
BSO207P
Description
MOSFET DUAL P-CH 20V 5.7A 8-SOIC
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO207P

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 5.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
1.2V @ 40µA
Gate Charge (qg) @ Vgs
23.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
1013pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
45 m Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
- 5.7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO207PINTR
BSO207PNT
BSO207PT
BSO207PT
SP000012573

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSO207P H
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Rev.1.2
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
Page 3
çV
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
GS
DD
DD
DD
GS
DD
A
GS
R
F
=-4.6A
=-1A, R
DS
=25°C
=-10V, |I
/dt=100A/µs
=0, V
=-10V, V
=-15V, I
=-15V, I
=0 to -4.5V
=-15V, I
=0, |I F | = |I D |
ç≥2*çI
Conditions
DS
G
D
=6Ω
F
D
D
D
ç*R
=-15V,
|
GS
=-5.7A
=-5.7A,
=-5.7A
=
DS(on)max
|l
=-4.5V,
D
|,
min.
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1013
-15.6
-0.88
12.3
typ.
388
318
-1.8
-7.3
-1.7
16
17
40
49
29
9
-
-
2001-11-20
BSO207P
max.
-23.4
-22.8
-1.32 V
13.5
15.4
-2.7
-2.2
-11
25
60
65
36
-
-
-
-
-
Unit
S
pF
ns
nC
V
A
ns
nC

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