BSO207P H Infineon Technologies, BSO207P H Datasheet - Page 5

• Manufacturer Part Number: BSO207P H
• Description: MOSFET 2P-CH 20V 5A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO207P H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1.2V @ 44µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1650pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Package: SO-8
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 45.0 mOhm
• Rds (on) (max) (@2.5v): 70.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.1.3
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
20
18
16
14
12
10
35
30
25
20
15
10
5
0
8
6
4
2
0
DS
GS
0.0
0
); T
); |V
j
4.5 V
=25 °C
j
GS
DS
|>2|I
0.5
2.5 V
1
D
|R
1.0
DS(on)max
- V
- V
150 °C
150 °C
GS
DS
2.2 V
2
[V]
[V]
1.5
25°C
25 °C
3
1.5 V
2.0
2.0V
1.8 V
2.5
page 5
4
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
40
35
30
25
20
15
10
5
0
D
=f(I
150
140
130
120
110
100
0
); T
90
80
70
60
50
40
30
20
10
0
D
0
j
); T
=25 °C
GS
2
j
=25 °C
5
4
6
8
I
D
- I
10
[A]
D
10
[A]
2.0 V
12
14
15
BSO207P H
2.2 V
16
4.5 V
10 V
3.0 V
2.5 V
18
2010-01-21
20
20