BSO604NS2 Infineon Technologies, BSO604NS2 Datasheet - Page 5

• Manufacturer Part Number: BSO604NS2
• Description: MOSFET N-CHAN DUAL 55V DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO604NS2

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2V @ 30µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO604NS2; BSO604NS2NT; BSO604NS2T; BSO604NS2TR; BSO604NS2XT; SP000396268

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
A
A
12
10
20
16
14
12
10
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
0
0
BSO604NS2
DS
GS
P
h
g
0.5
tot
f
0.5
); T
e
); V
= 2W
p
p
d
= 80 µs
1
= 80 µs
j
DS
=25°C
1
1.5
1.5
2 x I
2
2.5
D
2
x R
3
2.5
DS(on)max
3.5
a
c
3
b
V GS [V]
4
a
b
c
d
e
f
g
h
V
V
V
V
DS
10.0
GS
3.0
3.2
3.4
3.6
3.8
4.0
4.5
4
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m
= f(I
120
100
S
90
80
70
60
50
40
30
20
10
24
20
18
16
14
12
10
0
8
6
4
2
0
0
0
D
BSO604NS2
= f (I
V
); T
GS
3.4
c
1
2
c
[V] =
3.6
j
d
=25°C
D
fs
GS
2
4
)
3.8
e
3
6
4.0
f
4
8
4.5
g
10.0
10
h
5
12
6
BSO604NS2
14
7
2003-10-28
h
16
8
d
f
I
g
A
D
I
e
A
D
10
20