NDS9958 Fairchild Semiconductor, NDS9958 Datasheet - Page 8

• Manufacturer Part Number: NDS9958
• Description: MOSFET N+P 20V 3A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9958

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 525pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NDS9958TR

Typical Electrical Characteristic: N & P-Channel
V
Figure 23. Maximum Safe Operating Area.
GS
0.03
0.01
0.3
0.1
2 0
1 0
3
1
0.1
0 .0 0 5
0 .0 0 2
0 .0 0 1
0 .0 5
0 .0 2
0 .0 1
0 .5
0 .2
0 .1
0 .0001
1
R
SINGLE PULSE
0.2
V
T
GEN
A
GS
= 25°C
= ±20V
± V
D = 0.5
Figure 25. N or P-Channel
Switching Test Circuit
0.5
DS
V
0.2
, DRAIN-SOURCE VOLTAGE (V)
0.1
IN
0.05
Figure 24. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
G
0 .001
0.02
1
0.01
Single Pulse
depending on the circuit board design.
D
2
S
V
DD
R
L
5
0 .0 1
D U T
1 0
V
2 0
O U T
3 0
t , TIME (sec)
0 .1
1
(continued)
V
V
t
OUT
d(on)
IN
1 0 %
.
1
t
Figure 26. N or P-Channel
5 0 %
o n
Switching Waveforms
1 0 %
P(pk)
t
9 0 %
PULSE WIDTH
r
T - T
Duty Cycle, D = t
1 0
R
J
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
= See Note 1c
t
d(off)
JA
1
/ t
5 0 %
JA
(t)
1 0 0
2
9 0 %
t
1 0 %
off
9 0 %
3 0 0
NDS9958.SAM
t
f