FDC6020C Fairchild Semiconductor, FDC6020C Datasheet - Page 2

• Manufacturer Part Number: FDC6020C
• Description: MOSFET N/P-CHAN 20V COMPL 6SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6020C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.9A, 4.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 677pF @ 10V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT FLMP, SuperSOT-6 FLMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6020CTR; FDC6020C_NL; FDC6020C_NLTR; FDC6020C_NLTR

V
∆V
R
g
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
BV
∆BV
I
I
R
d(on)
r
d(off)
f
Electrical Characteristics
Off Characteristics
DSS
GSS
On Characteristics
Dynamic Characteristics
Symbol
FS
GS(th)
∆T
DS(on)
iss
oss
rss
g
gs
gd
∆T
G
GS(th)
DSS
J
DSS
J
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Parameter
(Note 2)
V
V
I
I
V
V
V
V
V
V
I
I
V
V
V
V
V
V
V
V
Q1:
V
Q2:
V
Q1:
V
V
Q2:
V
V
Q1:
V
Q2:
V
D
D
D
D
f = 1.0 MHz
f = 1.0 MHz
V
GS
GS
DS
DS
GS
GS
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DD
GS
DD
GS
DS
DS
GS
= –250 µA, Referenced to 25°C
= 250 µA, Referenced to 25°C
= –250 µA, Referenced to 25°C
= 250 µA, Referenced to 25°C
= 0 V,
= 0 V,
= –16 V,
= 16 V,
= +12 V,
= +12 V,
= V
= V
= –4.5 V,
= –2.5 V,
= –4.5 V, I
= 4.5 V,
= 2.5 V,
= 4.5 V, I
= –5 V,
= 5 V,
= –10 V, V
= 10 V, V
= –10 V,
= –4.5 V,
= 10 V,
= 4.5V,
= –10 V,I
= 10 V, I
= 15mV,
T
Test Conditions
A
GS
GS
= 25°C unless otherwise noted
,
,
D
D
D
GS
= 5.9 A,V
D
GS
= –4.2 A,V
= 5.9 A, T
= –4.2 A,T
= 0 V,
= 0 V,
I
I
V
V
V
V
I
I
I
I
I
I
I
I
f = 1.0 MHz
I
R
I
R
D
D
D
D
D
D
D
D
D
D
D
D
GS
GS
DS
DS
GEN
GEN
= –250 µA
= 250 µA
= –250 µA
= 250 µA
= –4.2 A
= –3.4 A
= 5.9 A
= 4.9 A
= – 4.2 A
= 5.9 A
= –1 A,
= 1 A,
GS
= 0 V
= 0 V
= 0 V
= 0 V
J
= 6 Ω
= 6 Ω
GS
= 125°C
= 4.5 V
J
= –4.5V
=125°C
Type Min Typ Max Units
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
–0.6
–20
0.6
20
–1.0
–14
753
677
163
171
1.0
2.2
1.6
1.5
1.9
1.8
12
–3
45
65
58
23
33
31
13
23
83
91
13
11
16
26
18
14
3
8
8
7
7
6
+100
+100
–1.5
1.5
–1
55
82
73
27
39
39
23
20
16
29
42
32
52
14
10
FDC6020C RevB (W)
1
8
mV/°C
mV/°C
mΩ
µA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Ω
V
V
S