FDC6020C Fairchild Semiconductor, FDC6020C Datasheet - Page 6

• Manufacturer Part Number: FDC6020C
• Description: MOSFET N/P-CHAN 20V COMPL 6SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6020C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.9A, 4.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 677pF @ 10V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT FLMP, SuperSOT-6 FLMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6020CTR; FDC6020C_NL; FDC6020C_NLTR; FDC6020C_NLTR

Typical Characteristics : Q2
1.6
1.4
1.2
0.8
0.6
20
16
12
20
16
12
Figure 13. On-Resistance Variation with
8
4
0
1
8
4
0
Figure 11. On-Region Characteristics.
-50
1
0
Figure 15. Transfer Characteristics.
V
GS
V
3.5V
I
D
GS
V
= 4.5V
-25
DS
= 5.9A
= 4.5V
= 5V
V
0.5
T
GS
V
0
J
DS
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
3.0V
, DRAIN-SOURCE VOLTAGE (V)
Temperature.
1.5
25
2.5V
50
1
75
T
A
2
=-55
100
o
1.5
C)
o
C
2.0V
125
125
o
C
25
o
C
150
2.5
2
Figure 16. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
100
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.1
10
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
Figure 12. On-Resistance Variation with
Figure 14. On-Resistance Variation with
1
with Source Current and Temperature.
2
1
0
1.5
0
V
V
Drain Current and Gate Voltage.
GS
GS
= 0V
= 2.0V
T
A
2
Gate-to-Source Voltage.
0.2
= 25
V
SD
4
V
, BODY DIODE FORWARD VOLTAGE (V)
o
C
GS
T
2.5
, GATE TO SOURCE VOLTAGE (V)
A
2.5V
= 125
0.4
I
D
, DRAIN CURRENT (A)
T
o
C
8
A
= 125
3
3.0V
25
0.6
o
o
C
C
3.5
-55
12
o
C
0.8
3.5V
4
16
I
FDC6020C RevB (W)
D
= 2.9A
4.5V
1
4.5
5
1.2
20