FDS8947A Fairchild Semiconductor, FDS8947A Datasheet - Page 3

• Manufacturer Part Number: FDS8947A
• Description: MOSFET P-CH DUAL 30V 4A 8SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDS8947A

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 730pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
20
15
10
20
15
10
5
0
5
0
Figure 3. On-Resistance Variation with
1
Figure 1. On-Region Characteristics
0
V
Figure 5. Transfer Characteristics
1.6
1.4
1.2
0.8
0.6
DS
V
1
-50
GS
= -5V
=-10V
V
I = -4.0A
D
GS
-25
2
-V
1
= -10V
-6.0V
GS
-V
Temperature.
DS
-5.0V
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
, DRAIN-SOURCE VOLTAGE (V)
0
-4.5V
J
3
-4.0V
2
25
T = -55°C
J
-3.5V
50
4
-3.0V
3
125°C
75
25°C
5
100
4
.
.
125
6
5
150
0.0001
0.001
2.5
1.5
0.5
0.01
0.25
0.15
0.05
0.1
3
2
1
Figure 2. On-Resistance Variation with
0.3
0.2
0.1
20
Figure 4. On-Resistance Variation with
Figure 6 . Body Diode Forward Voltage
5
1
0
0
0
2
V
GS
V
Voltage.
GS
= 0V
=-3.5V
-V
T = 125°C
4
J
SD
0.3
-V
Gate-to-Source Voltage.
, BODY DIODE FORWARD VOLTAGE (V)
Drain Current and Gate
4
Variation with Source Current
GS
and Temperature.
-I , DRAIN CURRENT (A)
, GATE TO SOURCE VOLTAGE (V)
D
-4.0V
8
0.6
25°C
-4.5V
6
-55°C
T = 125°C
A
T = 25°C
-5.0V
12
0.9
A
-6.0V
8
16
1.2
I = -2A
D
-10V
FDS8947A Rev.B
1.5
20
10