FDM2509NZ Fairchild Semiconductor, FDM2509NZ Datasheet - Page 4

• Manufacturer Part Number: FDM2509NZ
• Description: MOSFET N-CH DUAL 20V 8.7A 2X5MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDM2509NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1200pF @ 10V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: 6-MLP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.01
100
0.1
10
Figure 9. Maximum Safe Operating Area.
5
4
3
2
1
0
1
0.01
Figure 7. Gate Charge Characteristics.
0.1
0.1
0
0.0001
1
R
SINGLE PULSE
I
R
DS(ON)
D
θ JA
= 8.7A
V
T
GS
A
= 145
D = 0.5
= 25
LIMIT
= 4.5V
0.2
0.1
3
o
o
0.05
C
C/W
V
0.02
DS
0.01
, DRAIN-SOURCE VOLTAGE (V)
Q
0.001
1
g
DC
, GATE CHARGE (nC)
10s
6
1s
100ms
10ms
Figure 11. Transient Thermal Response Curve.
V
DS
1ms
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
SINGLE PULSE
= 5V
9
0.01
100us
10
10V
15V
12
0.1
100
15
t
1
, TIME (sec)
1800
1600
1400
1200
1000
800
600
400
200
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
C
0.01
rss
4
Power Dissipation.
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
oss
0.1
10
t
8
1
, TIME (sec)
1
P(pk)
C
Duty Cycle, D = t
iss
T
R
J
R
θJA
- T
θJA
12
(t) = r(t) * R
100
A
t
=145 °C/W
1
10
= P * R
t
2
SINGLE PULSE
R
θ JA
T
θJA
A
= 145°C/W
1
θJA
FDM2509NZ Rev C2
16
= 25°C
(t)
100
/ t
2
V
f = 1MHz
GS
1000
= 0 V
1000
20