FDR8305N Fairchild Semiconductor, FDR8305N Datasheet - Page 40
FDR8305N
Manufacturer Part Number
FDR8305N
Description
MOSFET N-CH DUAL 20V 4.5A SSOT-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR8305N
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 4.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 4.5V
Input Capacitance (ciss) @ Vds
1600pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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DIP-8
FQG4902
FQG4904
DIP-8 Complementary N- and P-Channel
Product
250 | -250
400 | -400
Min. (V)
BV
DSS
Complementary
Complementary
Config.
10V
2 | 2
3 | 3
R
DS(ON)
4.5V
–
–
Max (Ω) @ V
2-35
2.5V
–
–
GS
=
1.8V
–
–
Discrete Power Products –
Q
@V
g
7.6 | 20
Typ. (nC)
6 | 12
GS
= 5V
0.54 | 0.54
0.46 | 0.46
I
D
(A)
MOSFETs
P
D
1.4
1.6
(W)
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