FDS9933 Fairchild Semiconductor, FDS9933 Datasheet - Page 4

• Manufacturer Part Number: FDS9933
• Description: MOSFET P-CH DUAL 20V 5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS9933

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 825pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics:
5
4
3
2
1
0
0.01
Figure 9. Maximum Safe Operating Area.
100
0.1
10
0
Figure 7. Gate Charge Characteristics.
1
0.1
I
D
0.001
= -5A
R
0.01
0.1
DS(ON)
SINGLE PULSE
R
0.0001
1
V
JA
T
GS
A
= 135
LIMIT
= 25
= -4.5V
2
D = 0.5
0.2
o
0.1
o
0.05
C/W
C
0.02
-V
0.01
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
1
, GATE CHARGE (nC)
SINGLE PULSE
4
DC
0.001
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10s
Figure 11. Transient Thermal Response Curve.
1s
100ms
6
V
10ms
DS
10
= -4V
1ms
0.01
-6V
100 s
8
-8V
100
10
0.1
t
1
, TIME (sec)
1600
1200
800
400
50
40
30
20
10
Figure 8. Capacitance Characteristics.
0
0.001
0
0
Figure 10. Single Pulse Maximum
1
C
rss
0.01
4
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
C
10
oss
t
8
1
, TIME (sec)
1
Duty Cycle, D = t
P(pk)
T
R
J
R
JA
- T
12
JA
(t) = r(t) * R
100
A
= 135
C
10
= P * R
t
1
iss
t
2
SINGLE PULSE
R
o
C/W
JA
T
A
JA
= 135°C/W
1
FDS9933 Rev C
16
= 25°C
JA
(t)
100
/ t
2
f = 1 MHz
V
GS
1000
= 0 V
1000
20