FDW2503NZ Fairchild Semiconductor, FDW2503NZ Datasheet
FDW2503NZ
Specifications of FDW2503NZ
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FDW2503NZ Summary of contents
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... High performance trench technology for extremely low R DS(ON) Low profile TSSOP-8 package =25 C unless otherwise noted A Ratings (Note 1a) (Note 1a) (Note 1b) –55 to +150 (Note 1a) (Note 1b) Reel Size Tape width 13’’ 12mm July 2008 = 4. 2. Units 5 1.0 W 0.6 C 100 C/W 125 Quantity 2500 units FDW2503NZ Rev C1(W) ...
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... Test Conditions 250 250 A, Referenced – 250 250 A, Referenced 1.0 MHz 4 GEN determined by the user's board design. CA Min Typ Max Units mV –10 0.6 1.0 1.5 V –3 mV =125 1286 pF 305 pF 161 2 1.0 A 0.7 1.2 V (Note 2) FDW2503NZ Rev C1( ...
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... C 1 0.1 0.01 0.001 0.0001 2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 2.5V 3.0V 3.5V 4.0V 4. DRAIN CURRENT ( 2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 - 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDW2503NZ Rev C1( 1.2 ...
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... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 125 C/W JA P(pk ( Duty Cycle 100 1000 FDW2503NZ Rev C1(W) ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...