NDH8304P Fairchild Semiconductor, NDH8304P Datasheet - Page 6

• Manufacturer Part Number: NDH8304P
• Description: MOSFET P-CH DUAL 20V 2.7A SSOT8
• Manufacturer: Fairchild Semiconductor

Specifications of NDH8304P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 865pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical and Thermal Characteristics
Figure 13. Transconductance Variation with Drain
2 0
1 6
1 2
8
4
0
0
Current and Temperature.
V
DS
0.001
0.01
= -4.5V
0.1
0.0001
1
-4
I , DRAIN CURRENT (A)
D = 0.5
D = 0.5
D
0.2
0.2
0.1
0.1
-8
0.05
0.05
Figure 15. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1 .Transient thermal response will change
0.02
0.02
0.01
0.01
0.001
depending on the circuit board design.
Single Pulse
Single Pulse
-12
T = -55°C
J
125°C
25°C
0.01
-16
-20
0.1
t , TIME (sec)
1
1
0.05
0.01
Figure 14. Maximum Safe Operating Area.
0.5
0.1
1 5
1 0
5
2
1
0.1
0.2
R
.
A
SINGLE PULSE
J A
1
V
T
A
= See Note 1
GS
- V
= 25°C
= -4.5V
0.5
DS
, DRAIN-SOURCE VOLTAGE (V)
1
P(pk)
P(pk)
1 0
T - T
T - T
R
R
Duty Cycle, D = t / t
Duty Cycle, D = t / t
J
J
2
R
R
JA
JA
t
t
1
1
A
A
JA
JA
(t) = r(t) * R
(t) = r(t) * R
t
t
= P * R
= P * R
2
2
= See Note 1
= See Note 1
5
JA
JA
1
1
1 0 0
(t)
(t)
1 0
JA
JA
2
2
NDH8304P Rev.C
2 0
3 0 0
3 0