FDN357N Fairchild Semiconductor, FDN357N Datasheet

FDN357N

Manufacturer Part Number

FDN357N

Description

MOSFET N-CH 30V 1.9A SSOT3

Manufacturer

Fairchild Semiconductor

Datasheet

1.FDN357N.pdf (5 pages)

Specifications of FDN357N

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

60 mOhm @ 2.2A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

1.9A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

5.9nC @ 5V

Input Capacitance (ciss) @ Vds

235pF @ 10V

Power - Max

460mW

Mounting Type

Surface Mount

Package / Case

3-SSOT, SuperSOT-3

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.6 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

5 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

1.9 A

Power Dissipation

500 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDN357NTR

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Current page: 1 of 5
Download datasheet (91Kb)

Symbol

THERMAL CHARACTERISTICS

FDN357N

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Absolute Maximum Ratings

General Description

DSS

GSS

SuperSOT

field

proprietary, high cell density, DMOS technology. This very high

density process is especially tailored to minimize on-state

resistance. These devices are particularly suited for low voltage

applications in notebook computers, portable phones, PCMCIA

cards, and

switching, and low in-line power loss are needed in a very small

outline surface mount package.

STG

SOT-23

effect

Parameter

Drain-Source Voltage

Gate-Source Voltage - Continuous

Drain/Output Current - Continuous

Maximum Power Dissipation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

-3 N-Channel logic level enhancement mode power

transistors

SuperSOT -3

other battery powered circuits where fast

SuperSOT

are

- Pulsed

produced

-6

= 25

C unless other wise noted

using

SuperSOT

(Note 1b)

(Note 1a)

(Note 1)

Fairchild's

-8

Features

SO-8

1.9 A, 30 V, R

Industry standard outline SOT-23 surface mount

package using proprietary SuperSOT

superior thermal and electrical capabilities.

High density cell design for extremely low R

Exceptional on-resistance and maximum DC current

capability.

FDN357N

-55 to 150

DS(ON)

0.46

250

±20

1.9

0.5

DS(ON)

SOT-223

= 0.090

= 0.060

@ V

= 4.5 V

March 1998

-3 design for

SOIC-16

= 10 V.

DS(ON)

FDN357N Rev.C

Units

°C/W

°C

Related parts for FDN357N

FDN357N Summary of contents

Page 1

... Exceptional on-resistance and maximum DC current capability. TM SuperSOT -8 SO unless other wise noted A (Note 1a) (Note 1b) (Note 1a) (Note 1) March 1998 = 0.090 @ V = 4.5 V DS(ON 0.060 @ DS(ON design for . DS(ON) SOIC-16 SOT-223 FDN357N Units 30 V ± 0.5 W 0.46 -55 to 150 °C 250 °C/W 75 °C/W FDN357N Rev.C ...

Page 2

... C/W when mounted 0.001 in pad of 2oz Cu. Min Typ Max 55°C J 100 -100 1 1 -3.6 C 0.081 0.09 T =125°C 0.11 0.14 J 0.053 0. 235 145 4.2 5.9 1.3 1.7 0.42 0.71 1.2 (Note) Units V o mV/ C µA µ mV guaranteed by JC FDN357N Rev.C ...

Page 3

... I , DRAIN CURRENT (A) D Drain Current and Gate I =0.95A 125° 25° ,GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDN357N Rev 1.2 ...

Page 4

... Transient thermal response will change depending on the circuit board design. C iss C oss C rss = 0 V 0.2 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =250° C 25°C A 0.001 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. R ( 250 °C/W JA P(pk ( Duty Cycle 100 FDN357N Rev.C 30 100 300 300 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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