FDN361BN Fairchild Semiconductor, FDN361BN Datasheet - Page 3
![MOSFET N-CH 30V 1.4A SSOT3](/photos/5/45/54579/fdn361bn_sml.jpg)
FDN361BN
Manufacturer Part Number
FDN361BN
Description
MOSFET N-CH 30V 1.4A SSOT3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN361BN.pdf
(5 pages)
Specifications of FDN361BN
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 1.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
1.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
193pF @ 15V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.11 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.4 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN361BNTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDN361BN
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Results/Discussion
Test: (Autoclave)
Lot
Q20070473AAACLV
Q20070473ABACLV
Q20070473ACACLV
Q20070473BAACLV
Q20070473BBACLV
Q20070473BCACLV
Q20070473CAACLV
Q20070473DAACLV
Q20070473EAACLV
Q20070473FAACLV
Test: (High Humidity, High Temp, Rev. Bias)
Lot
Q20070473CAH3TRB
Q20070473FAH3TRB
Q20070473FBH3TRB
Test: (High Temperature Gate Bias)
Lot
Q20070473AAHTGB
Q20070473BAHTGB
Device
FDC658AP
FDN338P
Device
FDC637BNZ
FDC638APZ
Device
FDC637BNZ
FDC637BNZ
FDC637BNZ
FDC638APZ
FDC638APZ
FDC638APZ
FDC658AP
FAN2558SX
FDC365P
FDN338P
168-HOURS
0/77
0/77
0/77
168-HOURS
0/77
0/77
96-HOURS
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
500-HOURS
0/77
0/77
0/77
500-HOURS
0/77
1000-HOURS
0/77
0/77
0/77
1000-HOURS
0/77
Failure Code
Failure Code
Failure Code
Pg. 3