FDN361BN Fairchild Semiconductor, FDN361BN Datasheet
FDN361BN
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FDN361BN Summary of contents
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... TJA Thermal Resistance, Junction-to-Case R TJC Package Marking and Ordering Information Device Marking Device 361B FDN361BN ”2009 Fairchild Semiconductor Corporation FDN361BN Rev A1(W) “ MOSFET Features x 1 advanced R x Low gate charge x Industry standard outline SOT-23 surface mount package using proprietary SuperSOT ...
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... TJA the drain pins guaranteed by design while R TJC a) 250qC/W when mounted on a 0.02 in pad of 2 oz. copper. 2 Scale letter size paper Pulse Test: Pulse Width d 300 Ps, Duty Cycle d 2.0% 2. FDN361BN Rev A1( 25°C unless otherwise noted A Test Conditions = 250 250 PA,Referenced to 25qC ...
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... Figure 3. On-Resistance Variation with Temperature 125 - 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDN361BN Rev A1(W) 2.8 2.6 2 3.5V GS 2.2 2 3.5V 1.8 1.6 1.4 1.2 3.0V 1 0.8 0 1.5 2 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 0.225 0.2 0.175 0.15 ...
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... SINGLE PULSE 0.001 0.0001 0.001 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDN361BN Rev A1(W) 200 180 15V 160 20V 140 120 100 ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...