FDN361BN Fairchild Semiconductor, FDN361BN Datasheet - Page 3
![MOSFET N-CH 30V 1.4A SSOT3](/photos/5/45/54579/fdn361bn_sml.jpg)
FDN361BN
Manufacturer Part Number
FDN361BN
Description
MOSFET N-CH 30V 1.4A SSOT3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN361BN.pdf
(5 pages)
Specifications of FDN361BN
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 1.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
1.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
193pF @ 15V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.11 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.4 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN361BNTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDN361BN
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
FDN361BN Rev A1(W)
1.6
1.4
1.2
0.8
0.6
5
4
3
2
1
0
Figure 3. On-Resistance Variation with
1
5
4
3
2
1
0
-50
Figure 1. On-Region Characteristics.
0
2
Figure 5. Transfer Characteristics.
V
GS
6.0V
V
V
I
= 10V
D
GS
DS
= 1.4A
-25
= 10V
= 5V
V
V
0.5
DS
T
2.5
GS
0
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
Temperature.
T
4.5V
A
= 125
25
o
C
50
1
3
25
o
C
75
-55
o
C
100
o
3.5
1.5
C)
3.5V
125
3.0V
150
4
2
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.225
0.175
0.125
0.075
0.001
Figure 4. On-Resistance Variation with
Figure 2. On-Resistance Variation with
with Source Current and Temperature.
0.25
0.15
0.01
0.2
0.1
0.1
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
10
1
2
1
Drain Current and Gate Voltage.
3
0
0
V
V
GS
GS
T
A
= 3.5V
= 0V
Gate-to-Source Voltage.
= 25
4
0.2
V
o
SD
C
1
V
, BODY DIODE FORWARD VOLTAGE (V)
GS
4.0V
, GATE TO SOURCE VOLTAGE (V)
T
5
A
= 125
0.4
I
T
D
, DRAIN CURRENT (A)
A
4.5V
= 125
o
2
C
6
o
C
0.6
25
5.0V
o
7
C
3
0.8
8
-55
6.0V
www.fairchildsemi.com
o
C
I
4
D
= 0.7A
1
9
10V
10
1.2
5