FDN361BN Fairchild Semiconductor, FDN361BN Datasheet - Page 4
![MOSFET N-CH 30V 1.4A SSOT3](/photos/5/45/54579/fdn361bn_sml.jpg)
FDN361BN
Manufacturer Part Number
FDN361BN
Description
MOSFET N-CH 30V 1.4A SSOT3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN361BN.pdf
(5 pages)
Specifications of FDN361BN
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 1.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
1.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
193pF @ 15V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.11 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.4 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN361BNTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDN361BN
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
FDN361BN Rev A1(W)
0.01
100
0.1
10
10
Figure 9. Maximum Safe Operating Area.
0.001
1
8
6
4
2
0
Figure 7. Gate Charge Characteristics.
0.01
0.1
0
0.1
0.0001
1
SINGLE PULSE
R
R
TJA
DS(ON)
V
T
I
GS
A
D
= 270
= 25
=1.4A
= 10V
0.5
D = 0.5
LIMIT
o
o
0.2
C/W
C
0.1
0.05
0.02
V
0.01
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
1
1
g
SINGLE PULSE
0.001
, GATE CHARGE (nC)
DC
1s
1.5
100ms
Figure 11. Transient Thermal Response Curve.
V
10ms
DS
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
= 10V
10
2
1ms
0.01
20V
100Ps
2.5
15V
100
3
0.1
t
1
, TIME (sec)
200
180
160
140
120
100
80
60
40
20
5
4
3
2
1
0
0
0.01
0
Figure 8. Capacitance Characteristics.
1
Figure 10. Single Pulse Maximum
5
0.1
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
10
C
C
C
1
t
ISS
OSS
RSS
1
, TIME (sec)
15
P(pk)
Duty Cycle, D = t
T
10
R
J
R
TJA
- T
TJA
20
(t) = r(t) * R
100
A
t
= 270
1
= P * R
t
2
www.fairchildsemi.com
SINGLE PULSE
R
100
TJA
o
C/W
T
A
TJA
25
= 270°C/W
= 25°C
1
TJA
f = 1 MHz
V
(t)
/ t
GS
2
= 0 V
1000
1000
30