FDN361BN Fairchild Semiconductor, FDN361BN Datasheet - Page 3

• Manufacturer Part Number: FDN361BN
• Description: MOSFET N-CH 30V 1.4A SSOT3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDN361BN

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 1.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 193pF @ 15V
• Power - Max: 460mW
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDN361BNTR

Device #1 FAN2558SX
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
ACLV
SOPL1
THBT
TMCL1
Device #2 FDC365P
Package:
#Leads:
Precondition Description:
P/C
X
X
X
TTG23
006
TTK23
C06
P/C
Standard
JESD22-A102 100%RH, 121C 96
JESD22-A108 NA%RH, 150C
JESD22-A101 85%RH, 85C, 5V 168
JESD22-A104 -65C, 150C
Standard
JESD22-A113
Qualification Stress Test and Sample Size Detail
Conditions
Conditions
Readpoints
TP1
168
100
TP2
500
500
500
TP3
1000
1000
Read-
points
Read-
points
Samples
A
77
77
77
77
Sample
Sample
A
0
Pg. 3