FDN302P Fairchild Semiconductor, FDN302P Datasheet
FDN302P
Specifications of FDN302P
Q1148322
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FDN302P Summary of contents
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... Reel Size 7’’ October 2000 R = 0.055 @ V = –4.5 V DS(ON 0.080 @ V = –2.5 V DS(ON provides low R and 30% higher DS(ON Ratings Units V – – 2.4 – 10 0.5 W 0.46 – +150 250 C/W 75 C/W Tape width Quantity 8mm 3000 units FDN302P Rev C(W) ...
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... GEN V = – –2 –4 –0.42 (Note determined by the user's board design 270°C/W when mounted on a minimum pad. Min Typ Max Units –20 V –12 mV/ C –1 A 100 nA –100 nA –0.6 –1.0 –1 mV – 882 pF 211 pF 112 –0.42 A –0.7 –1.2 V FDN302P Rev C(W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.0V -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -1 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDN302P Rev C( 1.2 ...
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... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 270°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 270 °C/W JA P(pk ( Duty Cycle 100 1000 FDN302P Rev C(W) 12 ...
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TRADEMARKS DISCLAIMER LIFE SUPPORT POLICY PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition ...