FDN304PZ Fairchild Semiconductor, FDN304PZ Datasheet
FDN304PZ
Manufacturer Part Number
FDN304PZ
Description
MOSFET P-CH 20V 2.4A SSOT-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDN304PZ.pdf
(5 pages)
Specifications of FDN304PZ
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 2.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
1310pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.052Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Drain Current (max)
2.4A
Power Dissipation
500mW
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SuperSOT
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.052 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.4 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN304PZ
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDN304PZ
Manufacturer:
Fairchild Semiconductor
Quantity:
162 756
Company:
Part Number:
FDN304PZ
Manufacturer:
MURATA
Quantity:
844
Part Number:
FDN304PZ-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDN304PZ_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDN304PZ
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
P-Channel
SuperSOT -3
04Z
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
1.8V
D
TM
specified
G
– Continuous
– Pulsed
FDN304PZ
Device
Parameter
MOSFET
S
T
A
uses
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–2.4 A, –20 V.
Fast switching speed
ESD protection diode
High performance trench technology for extremely
low R
SuperSOT
power handling capability than SOT23 in the same
footprint
DS(ON)
TM
-3 provides low R
Tape width
G
–55 to +150
8mm
R
R
R
Ratings
DS(ON)
DS(ON)
DS(ON)
–2.4
0.46
–20
–10
250
0.5
75
8
D
= 52 m
= 70 m
= 100 m
DS(ON)
S
@ V
@ V
@ V
March 2003
and 30% higher
GS
GS
FDN304PZ Rev C (W)
GS
3000 units
Quantity
= –4.5 V
= –2.5 V
= –1.8 V
Units
C/W
C/W
W
V
V
A
C
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FDN304PZ Summary of contents
Page 1
... Reel Size 7’’ March 2003 –4.5 V DS(ON –2.5 V DS(ON 100 –1.8 V DS(ON provides low R and 30% higher DS(ON Ratings Units – –2.4 A –10 0.5 W 0.46 –55 to +150 C 250 C/W 75 C/W Tape width Quantity 8mm 3000 units FDN304PZ Rev C (W) ...
Page 2
... –2 100 A/µ determined by the user's board design 270°C/W when mounted on a minimum pad. 2.0% Min Typ Max Units –20 V –13 mV/ C – –0.4 –0.8 –1 mV 100 – 1310 pF 240 pF 106 pF 5 –0.42 A –0.6 –1.2 V (Note FDN304PZ Rev C (W) ...
Page 3
... C 0.001 0.0001 0 2 2.5 3 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -2.5V -3.0V -3.5V -4.5V -6.0V -10. DRAIN CURRENT ( -1 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDN304PZ Rev C ( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 250°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 250 °C/W JA P(pk ( Duty Cycle 100 1000 FDN304PZ Rev C (W) ...
Page 5
CROSSVOLT â â â â â Rev. I2 ...