FDC604P Fairchild Semiconductor, FDC604P Datasheet
FDC604P
Manufacturer Part Number
FDC604P
Description
MOSFET P-CH 20V 5.5A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC604P.pdf
(5 pages)
Specifications of FDC604P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
33 mOhm @ 5.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 4.5V
Input Capacitance (ciss) @ Vds
1926pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.033 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
23 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
5.5 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC604PTR
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Price
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FDC604P
Manufacturer:
Fairchild Semiconductor
Quantity:
31 063
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FDC604P
Manufacturer:
FAIRCHILD
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FDC604P
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Quantity:
20 000
Part Number:
FDC604P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
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Manufacturer:
FSC
Quantity:
2 900
Part Number:
FDC604P_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDC604P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This
Fairchild’s low voltage PowerTrench process. It has
been
applications.
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
P-Channel
optimized
.604
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
for
1.8V
D
battery
D
specified
TM
S
– Continuous
– Pulsed
FDC604P
power
Device
Parameter
D
MOSFET
D
management
G
T
A
=25
uses
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–5.5 A, –20 V.
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
1
2
3
Tape width
–55 to +150
8mm
R
R
R
Ratings
DS(ON)
DS(ON)
DS(ON)
–5.5
–20
–20
1.6
0.8
78
30
8
= 33 m @ V
= 43 m @ V
= 60 m @ V
January 2001
6
5
4
GS
GS
GS
3000 units
FDC604P Rev C (W)
Quantity
= –4.5 V
= –2.5 V
= –1.8 V
Units
C/W
C/W
W
V
V
A
C
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FDC604P Summary of contents
Page 1
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 7’’ January 2001 –4.5 V DS(ON –2.5 V DS(ON –1.8 V DS(ON Ratings Units – –5.5 A –20 1.6 W 0.8 –55 to +150 C 78 C/W 30 C/W Tape width Quantity 8mm 3000 units FDC604P Rev C (W) ...
Page 2
... MHz V = – – –4 GEN V = – –3 –4 –1 determined by the user's board design. 2.0% Min Typ Max Units –20 V –12 mV/ C –1 A 100 nA –100 nA –0.4 –0.7 –1 mV – 1926 pF 530 pF 185 144 7.5 nC –1.3 A –0.7 –1.2 V (Note 2) FDC604P Rev C(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -1.8V -2.0V -2.5V -4. DRAIN CURRENT ( -2 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC604P Rev C( 1.2 ...
Page 4
... Figure 8. Capacitance Characteristics. 5 100 100 0.1 Figure 10. Single Pulse Maximum 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 156 C 100 SINGLE PULSE TIME (SEC) Power Dissipation ° FDC604P Rev C(W) ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ...