This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 7’’ January 2001 –4.5 V DS(ON –2.5 V DS(ON –1.8 V DS(ON Ratings Units – –5.5 A –20 1.6 W 0.8 –55 to +150 C 78 C/W 30 C/W Tape width Quantity 8mm 3000 units FDC604P Rev C (W) ...
... MHz V = – – –4 GEN V = – –3 –4 –1 determined by the user's board design. 2.0% Min Typ Max Units –20 V –12 mV/ C –1 A 100 nA –100 nA –0.4 –0.7 –1 mV – 1926 pF 530 pF 185 144 7.5 nC –1.3 A –0.7 –1.2 V (Note 2) FDC604P Rev C(W) ...
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -1.8V -2.0V -2.5V -4. DRAIN CURRENT ( -2 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC604P Rev C( 1.2 ...
... Figure 8. Capacitance Characteristics. 5 100 100 0.1 Figure 10. Single Pulse Maximum 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 156 C 100 SINGLE PULSE TIME (SEC) Power Dissipation ° FDC604P Rev C(W) ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ...