NDT3055 Fairchild Semiconductor, NDT3055 Datasheet

MOSFET N-CH 60V 4A SOT-223-4

NDT3055

Manufacturer Part Number
NDT3055
Description
MOSFET N-CH 60V 4A SOT-223-4
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDT3055

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 30V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
6 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A
Power Dissipation
3000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Fall Time
30 ns
Rise Time
18 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDT3055TR

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© 1998 Fairchild Semiconductor Corporation
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
* Order option J23Z for cropped center drain lead.
D
NDT3055
N-Channel Enhancement Mode Field Effect Transistor
Absolute Maximum Ratings
J
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as DC motor control and
DC/DC conversion where fast switching, low in-line
power loss, and resistance to transients are needed.
DSS
GSS
D
,T
JA
JC
SuperSOT
D
STG
SOT-223
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
Maximum Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
TM
-3
G
SuperSOT
D
S
TM
-6
- Pulsed
T
G
A
= 25
o
C unless otherwise noted
SuperSOT
D
D
(Note 1c)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
(Note 1)
TM
S
-8
SOT-223*
Features
(J23Z)
D
4 A, 60 V. R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
SO-8
DS(ON)
G
= 0.100
-65 to 150
NDT3055
±20
1.3
1.1
60
25
42
12
SOT-223
4
3
S
@ V
GS
= 10 V.
G
DS(ON)
SOIC-16
D
May 1998
.
NDT3055 Rev.B
S
Units
°C/W
°C/W
°C
W
V
V
A

Related parts for NDT3055

NDT3055 Summary of contents

Page 1

... High power and current handling capability in a widely used surface mount package. TM SuperSOT -8 SO SOT-223* (J23Z unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) May 1998 = 0.100 @ DS(ON DS(ON) SOT-223 SOIC- NDT3055 60 ± 1.3 1.1 -65 to 150 42 12 NDT3055 Rev.B S Units °C °C/W °C/W ...

Page 2

... Cu. Min Typ Max mV =125°C 100 J 100 -100 =125°C 1.5 2 0.084 0.1 T =125°C 0.14 0. 250 100 2.3 2.6 2.5 0.85 1.2 the drain pins 110 C/W when mounted on a 0.00123 0.066 pad of 2oz Cu. NDT3055 Rev.B Units µA µ ...

Page 3

... I , DRAIN CURRENT (A) D Drain Current and Gate Voltage 125° 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to- Source Voltage 125°C A 25°C -55°C 0 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Current and Temperature. NDT3055 Rev.B 10V 1.2 ...

Page 4

... Transient thermal response will change depending on the circuit board design. C iss C oss C rss MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =110°C 25°C A 0.01 0 100 SINGLE PULSE TIME (SEC) Dissipation. R ( 110 °C/W JA P(pk ( Duty Cycle 100 NDT3055 Rev.B 60 300 300 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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