FDFMA2P859T Fairchild Semiconductor, FDFMA2P859T Datasheet

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FDFMA2P859T

Manufacturer Part Number
FDFMA2P859T
Description
MOSFET P-CH 20V 3A MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDFMA2P859T

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
120 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.3V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
435pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDFMA2P859TTR
©2009 Fairchild Semiconductor Corporation
FDFMA2P859T Rev.B
FDFMA2P859T
Integrated P-Channel PowerTrench
–20 V, –3.0 A, 120 m:
Features
MOSFET
„ Max r
„ Max r
„ Max r
Schottky:
„ V
„ Low profile - 0.55 mm maximum - in the new package
„ Free from halogenated compounds and antimony oxides
„ RoHS compliant
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
V
I
R
R
R
R
D
O
J
DSS
GSS
D
RRM
TJA
TJA
TJA
TJA
MicroFET 2x2 Thin
, T
F
Symbol
Device Marking
STG
< 0.54 V @ 1 A
DS(on)
DS(on)
DS(on)
:
59
= 120 m: at V
= 160 m: at V
= 240 m: at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
MicroFET 2x2 Thin
GS
GS
GS
FDFMA2P859T
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
-Pulsed
Device
D
D
D
Pin 1
= –3.0 A
= –2.5 A
= –1.0 A
T
C
A
= 25 °C unless otherwise noted
A
Parameter
G
MicroFET 2x2 Thin
NC
Package
S
1
D
®
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features a MOSFET with low
on-state resistance and an independently connected low forward
voltage schottky diode for minimum conduction losses.
The MicroFET 2x2 Thin package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
MOSFET and Schottky Diode
Reel Size
7 ’’
NC
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
A
D
2
3
1
Tape Width
8 mm
–55 to +150
Ratings
173
140
–20
1.4
0.7
86
±8
–3
–6
30
86
1
www.fairchildsemi.com
4
5
3000 units
6
Quantity
July 2009
C
G
S
Units
°C/W
°C
W
V
V
A
V
A

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FDFMA2P859T Summary of contents

Page 1

... TJA Package Marking and Ordering Information Device Marking Device 59 FDFMA2P859T ©2009 Fairchild Semiconductor Corporation FDFMA2P859T Rev.B ® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other = –3.0 A ultra-portable applications ...

Page 2

... SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Schottky Diode Characteristics I Reverse Leakage R I Reverse Leakage R V Forward Voltage F V Forward Voltage F ©2009 Fairchild Semiconductor Corporation FDFMA2P859T Rev °C unless otherwise noted J Test Conditions = –250 PA –250 PA, referenced to 25 ° – ± ...

Page 3

... C/W when mounted pad copper. 2: Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. ©2009 Fairchild Semiconductor Corporation FDFMA2P859T Rev °C unless otherwise noted A 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material pad copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. ...

Page 4

... Junction Temperature 6 P PULSE DURATION = 300 s DUTY CYCLE = 2% MAX 125 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDFMA2P859T Rev °C unless otherwise noted J 3 1 0.5 1.5 2.0 2.5 Figure 2. 0.28 0.24 0.20 0.16 ...

Page 5

... Forward Bias Safe Operating Area 10000 125 C 1000 J 100 0.1 0. REVERSE VOLTAGE (V) R Figure 11. Schottky Diode Reverse Current ©2009 Fairchild Semiconductor Corporation FDFMA2P859T Rev °C unless otherwise noted J 700 600 500 400 300 200 100 100 100 Figure 10. 200 100 ...

Page 6

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0. Figure 13. Junction to Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDFMA2P859T Rev °C unless otherwise noted J SINGLE PULSE 173 C RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR PEAK TJA ...

Page 7

... Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDFMA2P859T Rev.B 7 www.fairchildsemi.com ...

Page 8

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDFMA2P859T Rev.B FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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