NDS9435A Fairchild Semiconductor, NDS9435A Datasheet
NDS9435A
Manufacturer Part Number
NDS9435A
Description
MOSFET P-CH 30V 5.3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.NDS9435A.pdf
(5 pages)
Specifications of NDS9435A
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 5.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
528pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS9435ATR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDS9435A
Manufacturer:
FSC
Quantity:
25 000
Company:
Part Number:
NDS9435A
Manufacturer:
NS
Quantity:
1 530
Part Number:
NDS9435A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
NDS9435A-NL
Manufacturer:
FAIRCHILD
Quantity:
503
Part Number:
NDS9435A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
NDS9435A
30V P-Channel PowerTrench
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
• Power management
• Load switch
• Battery protection
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJA
θJC
, T
Device Marking
STG
NDS9435A
Semiconductor’s
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
Pin 1
D
D
SO-8
D
advanced
D
– Continuous
– Pulsed
D
NDS9435A
D
Device
Parameter
S
S
S
PowerTrench
S
S
S
G
G
MOSFET
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1c)
(Note 1)
Features
• –5.3 A, –30 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
• High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
–55 to +175
12mm
R
R
Ratings
DS(ON)
DS(ON)
–5.3
–30
±25
–50
125
2.5
1.2
50
25
1
= 50 mΩ @ V
= 80 mΩ @ V
January 2002
4
3
2
1
GS
GS
NDS9435A Rev E(W)
2500 units
Quantity
= –10 V
= –4.5 V
Units
°C/W
°C/W
°C/W
°C
W
V
V
A
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NDS9435A Summary of contents
Page 1
... Reel Size 13’’ January 2002 mΩ –10 V DS(ON mΩ –4.5 V DS(ON Ratings Units –30 V ±25 V –5.3 A –50 2.5 W 1.2 1 –55 to +175 °C 50 °C/W 125 °C/W 25 °C/W Tape width Quantity 12mm 2500 units NDS9435A Rev E(W) ...
Page 2
... Min Typ Max Units –30 V –23 mV/°C –1 µA 100 nA –100 nA –1 –1.7 –3 V 4.5 mV/° mΩ – 528 pF 132 2 –2.1 A –0.8 –1 125°C/W when mounted on a minimum pad. NDS9435A Rev E(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. =-4.0V GS -4.5V -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage. = 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD NDS9435A Rev E( 1.4 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 125 C/W θJA P(pk (t) θ Duty Cycle 100 NDS9435A Rev E(W) 30 1000 2 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...