FDMA430NZ Fairchild Semiconductor, FDMA430NZ Datasheet

MOSFET N-CH 30V 5A MICROFET

FDMA430NZ

Manufacturer Part Number
FDMA430NZ
Description
MOSFET N-CH 30V 5A MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMA430NZ

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 5A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Input Capacitance (ciss) @ Vds
800pF @ 10V
Power - Max
2.4W
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA430NZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMA430NZ
Manufacturer:
Fairchild Semiconductor
Quantity:
40 185
©2009 Fairchild Semiconductor Corporation
FDMA430NZ Rev B4
Absolute Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMA430NZ
Single N-Channel 2.5V Specified PowerTrench
30V, 5.0A, 40m:
General Description
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process
to optimize the R
leadframe.
Applications
„ Li-lon Battery Pack
V
V
I
P
T
R
R
D
J
DSS
GSS
D
TJA
TJA
Symbol
, T
Device Marking
STG
Drain
430
Pin 1
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power dissipation (Steady State)
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
MicroFET 2X2 (Bottom View)
DS
(on) @V
D
D
D
GS
FDMA430NZ
-Continuous
-Pulsed
=2.5V on special MicroFET
Device
D
S
G
Parameter
T
A
= 25°C unless otherwise noted
Source
Reel Size
7”
1
„ HBM ESD protection level > 2.5k V typical (Note 3)
„ RoHS Compliant
Features
„ R
„ R
„ Low Profile-0.8mm maximum-in the new package
„ Free from halogenated compounds and antimony oxides
MicroFET 2x2 mm
DS(on)
DS(on)
S
D
D
Tape Width
= 40m: @ V
= 50m: @ V
(Note 1b)
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
4
5
6
12mm
Bottom Drain Contact
®
MOSFET
GS
GS
= 2.5 V, I
= 4.5 V, I
-55 to +150
Ratings
r12
145
5.0
2.4
0.9
30
20
52
D
D
= 4.5A
= 5.0A
3000 units
Quantity
www.fairchildsemi.com
August 2009
3
2
1
G
D
D
Units
o
C/W
o
W
V
V
A
C
tm

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FDMA430NZ Summary of contents

Page 1

... TJA R Thermal Resistance, Junction-to-Ambient TJA Package Marking and Ordering Information Device Marking Device 430 FDMA430NZ ©2009 Fairchild Semiconductor Corporation FDMA430NZ Rev B4 Features „ 40m DS(on) „ 50m DS(on) „ Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm „ HBM ESD protection level > 2.5k V typical (Note 3) „ ...

Page 2

... TJA mounting surface of the drain pins. 2. Pulse Test: Pulse Width < 300 Ps, Duty Cycle < 2.0% 3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied. FDMA430NZ Rev 25°C unless otherwise noted J Test Conditions ...

Page 3

... J Figure 3. Normalized On Resistance vs Junction Temperature 30 P PULSE DURATION = 300 DUTY CYCLE = 2.0% MAX 125 0.5 1.0 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMA430NZ Rev 25°C unless otherwise noted J 1.8 1 2.5V 1 1.4 1.3 1 2.0V GS 1.1 1 1.5V GS 0.9 0 Figure 2. 0.08 ...

Page 4

... RATED 0.01 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 9. Safe Operating Area 200 100 SINGLE PULSE 1 0 Figure 11. Single Pulse Maximum Power Dissipation FDMA430NZ Rev 25°C unless otherwise noted J 1000 V = 15V DS 100 = 20V 10 0 Figure 8. 5 10us 4 100us 3 1ms 10ms 2 100ms 1s 1 10s DC ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0. Figure 12. FDMA430NZ Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION(s) Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK TJA TJA 145 C TJA www.fairchildsemi.com ...

Page 6

... Dimensional Outline and Pad Layout FDMA430NZ Rev B4 6 www.fairchildsemi.com ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMA430NZ Rev. B4 FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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