FDS4465 Fairchild Semiconductor, FDS4465 Datasheet - Page 4

• Manufacturer Part Number: FDS4465
• Description: MOSFET P-CH 20V 13.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4465

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 13.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 13.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 8237pF @ 10V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 70 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 13.5 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Dc: 09+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4465TR

Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
10
Figure 9. Maximum Safe Operating Area.
0
1
Figure 7. Gate Charge Characteristics.
0.1
I
D
0.001
= -13.5A
R
SINGLE PULSE
0.01
R
0.1
DS(ON)
V
JA
0.0001
T
1
GS
A
= 125
= 25
= -4.5V
20
LIMIT
o
o
C
C/W
D = 0.5
-V
0.2
0.1
0.05
DS
0.02
, DRAIN-SOURCE VOLTAGE (V)
Q
g
1
0.01
SINGLE PULSE
, GATE CHARGE (nC)
40
0.001
DC
10s
1s
Figure 11. Transient Thermal Response Curve.
100ms
60
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10ms
V
DS
10
1ms
= -5V
0.01
100 s
80
-15V
-10V
100
100
0.1
t
1
, TIME (sec)
10000
50
40
30
20
10
8000
6000
4000
2000
0
0.001
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
0.01
-V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
C
t
1
ISS
C
C
, TIME (sec)
OSS
RSS
10
P(pk)
Duty Cycle, D = t
T
R
1
J
R
JA
- T
100
JA
(t) = r(t) + R
A
t
= 125
1
= P * R
t
SINGLE PULSE
R
2
JA
15
T
A
o
= 125°C/W
10
C/W
= 25°C
JA
f = 1 MHz
V
FDS4465 Rev C1 (W)
1
GS
(t)
JA
/ t
= 0 V
2
1000
100
20