FDS4465 Fairchild Semiconductor, FDS4465 Datasheet - Page 4
![MOSFET P-CH 20V 13.5A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS4465
Manufacturer Part Number
FDS4465
Description
MOSFET P-CH 20V 13.5A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS4465.pdf
(5 pages)
Specifications of FDS4465
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 13.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
13.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 4.5V
Input Capacitance (ciss) @ Vds
8237pF @ 10V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0085 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
70 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
13.5 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Dc
09+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS4465TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS4465
Manufacturer:
FSC
Quantity:
50 000
Company:
Part Number:
FDS4465
Manufacturer:
MXIC
Quantity:
10 000
Part Number:
FDS4465
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS4465-NL
Manufacturer:
FAIRCHILD
Quantity:
25 000
Part Number:
FDS4465-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
10
Figure 9. Maximum Safe Operating Area.
0
1
Figure 7. Gate Charge Characteristics.
0.1
I
D
0.001
= -13.5A
R
SINGLE PULSE
0.01
R
0.1
DS(ON)
V
JA
0.0001
T
1
GS
A
= 125
= 25
= -4.5V
20
LIMIT
o
o
C
C/W
D = 0.5
-V
0.2
0.1
0.05
DS
0.02
, DRAIN-SOURCE VOLTAGE (V)
Q
g
1
0.01
SINGLE PULSE
, GATE CHARGE (nC)
40
0.001
DC
10s
1s
Figure 11. Transient Thermal Response Curve.
100ms
60
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10ms
V
DS
10
1ms
= -5V
0.01
100 s
80
-15V
-10V
100
100
0.1
t
1
, TIME (sec)
10000
50
40
30
20
10
8000
6000
4000
2000
0
0.001
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
0.01
-V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
C
t
1
ISS
C
C
, TIME (sec)
OSS
RSS
10
P(pk)
Duty Cycle, D = t
T
R
1
J
R
JA
- T
100
JA
(t) = r(t) + R
A
t
= 125
1
= P * R
t
SINGLE PULSE
R
2
JA
15
T
A
o
= 125°C/W
10
C/W
= 25°C
JA
f = 1 MHz
V
FDS4465 Rev C1 (W)
1
GS
(t)
JA
/ t
= 0 V
2
1000
100
20