FDMC6675BZ Fairchild Semiconductor, FDMC6675BZ Datasheet

MOSFET P-CH 30V 9.5A POWER33

FDMC6675BZ

Manufacturer Part Number
FDMC6675BZ
Description
MOSFET P-CH 30V 9.5A POWER33
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC6675BZ

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14.4 mOhm @ 9.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
2865pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power33
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0144 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
9.5 A
Power Dissipation
2300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMC6675BZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC6675BZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDMC6675BZ
0
Company:
Part Number:
FDMC6675BZ
Quantity:
1 000
©2010 Fairchild Semiconductor Corporation
FDMC6675BZ Rev.D3
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMC6675BZ
P-Channel Power Trench
-30 V, -20 A, 14.4 m:
Features
„ Max r
„ Max r
„ HBM ESD protection level of 8 kV typical(note 3)
„ Extended V
„ High performance trench technology for extremely low r
„ High power and current handling capability
„ Termination is Lead-free and RoHS Compliant
V
V
I
P
T
R
R
D
J
DS
GS
D
TJC
TJA
, T
Symbol
Device Marking
STG
FDMC6675BZ
DS(on)
DS(on)
GSS
= 14.4 m: at V
= 27.0 m: at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
range (-25 V) for battery applications
Top
GS
GS
MLP 3.3x3.3
FDMC6675BZ
-Continuous
= -10 V, I
= -4.5 V, I
-Continuous (Silicon limited)
-Pulsed
Device
D
D
Pin 1
= -9.5 A
= -6.9 A
T
A
®
= 25 °C unless otherwise noted
MOSFET
Parameter
S
S
S
MLP 3.3X3.3
DS(on)
G
Package
Bottom
1
T
T
T
T
T
General Description
The FDMC6675BZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
Application
„ Load Switch in Notebook and Server
„ Notebook Battery Pack Power Management
C
C
A
C
A
D
DS(on)
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
D
D
D
and ESD protection.
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
8
6
7
5
Tape Width
12 mm
-55 to +150
Ratings
±25
-9.5
-30
-20
-40
-32
3.4
2.3
36
53
September 2010
www.fairchildsemi.com
3000 units
Quantity
4
3
1
2
G
Units
S
S
S
°C/W
°C
W
V
V
A

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FDMC6675BZ Summary of contents

Page 1

... Device FDMC6675BZ FDMC6675BZ ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev.D3 ® MOSFET General Description = -9.5 A The FDMC6675BZ has been designed to minimize losses in D load switch applications. Advancements in both silicon and = -6 package technologies have been combined to offer the lowest r and ESD protection. DS(on) Application „ ...

Page 2

... Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2 The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev. °C unless otherwise noted J Test Conditions ...

Page 3

... Junction Temperature 32 P PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev. °C unless otherwise noted J 5.0 4.5 4.0 3.5 3.0 2 -3.5 V 2 1.0 0.5 2.0 2.5 3 100 125 150 ...

Page 4

... Figure 9. Unclamped Inductive Switching Capability THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev. °C unless otherwise noted - - 100 100 100 100 4 ...

Page 5

... Figure 13. Single Pulse Maximum 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 14. ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev. °C unless otherwise noted - PULSE WIDTH (sec) Power Dissipation SINGLE PULSE 125 C RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev.D3 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMC6675BZ Rev.D3 Power-SPM™ ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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