FQU11P06TU Fairchild Semiconductor, FQU11P06TU Datasheet - Page 8
![MOSFET P-CH 60V 9.4A IPAK](/photos/5/47/54721/fqu11p06tu_sml.jpg)
FQU11P06TU
Manufacturer Part Number
FQU11P06TU
Description
MOSFET P-CH 60V 9.4A IPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQU11P06TU.pdf
(9 pages)
Specifications of FQU11P06TU
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
185 mOhm @ 4.7A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
9.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.185 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
4.9 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9.4 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Mechanical Dimensions
I - PAK
Dimensions in Millimeters
Rev. C6. January 2009
©2009 Fairchild Semiconductor Corporation