FQU11P06TU Fairchild Semiconductor, FQU11P06TU Datasheet - Page 2

• Manufacturer Part Number: FQU11P06TU
• Description: MOSFET P-CH 60V 9.4A IPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQU11P06TU

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 185 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.185 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.9 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9.4 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Change To
Product Id Description : All devices packaged in D/I-PAK(Non JEDEC TYPE)
Affected FSIDs :
FJD3076TF_NL
FQD10N20CTF_NL
FJD3076TM
FQD10N20CTM
FQD10N20CTF
FQD10N20CTM_NL
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