FDB8445 Fairchild Semiconductor, FDB8445 Datasheet - Page 3

MOSFET N-CH 40V 70A D2PAK

FDB8445

Manufacturer Part Number
FDB8445
Description
MOSFET N-CH 40V 70A D2PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDB8445

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 10V
Input Capacitance (ciss) @ Vds
3805pF @ 25V
Power - Max
92W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0068 Ohms @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
70 A
Power Dissipation
92 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB8445TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDB8445
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDB8445
Manufacturer:
FAIRCHILD
Quantity:
12 500
FDB8445 Rev A1 (W)
Notes:
1: Maximum wire current carrying capacity is 70A.
2: Starting T
Electrical Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
t
t
t
t
t
t
V
t
Q
(on)
d(on)
r
d(off)
f
off
rr
SD
rr
Symbol
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
J
= 25
o
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
C, L = 65µH, I
AS
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
= 56A.
Parameter
T
J
= 25°C unless otherwise noted
certification.
V
V
I
I
I
I
SD
SD
F
F
DD
GS
= 70A, di/dt = 100A/µs
= 70A, di/dt = 100A/µs
= 70A
= 35A
3
= 20V, I
= 10V, R
Test Conditions
D
GS
= 70A
= 5Ω
Min
-
-
-
-
-
-
-
-
-
-
Typ
10
19
36
16
-
-
-
-
-
-
www.fairchildsemi.com
Max
1.25
59
77
1.0
45
81
-
-
-
-
Units
nC
ns
ns
ns
ns
ns
ns
ns
V
V

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