FDMS6673BZ Fairchild Semiconductor, FDMS6673BZ Datasheet

MOSFET P-CH 30V 15.2A POWER56

FDMS6673BZ

Manufacturer Part Number
FDMS6673BZ
Description
MOSFET P-CH 30V 15.2A POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS6673BZ

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.8 mOhm @ 15.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
15.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
5915pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0068 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
15.2 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS6673BZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS6673BZ
Manufacturer:
FAIRCHILD
Quantity:
147
Part Number:
FDMS6673BZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDMS6673BZ
0
©2009 Fairchild Semiconductor Corporation
FDMS6673BZ Rev C3
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS6673BZ
P-Channel PowerTrench
-30 V, -28 A, 6.8 m
Features
V
V
I
P
T
R
R
D
J
DS
GS
D
, T
Max r
Max r
Advanced Package and Silicon combination
for low r
HBM ESD protection level of 8 kV typical(note 3)
MSL1 robust package design
RoHS Compliant
JC
JA
Symbol
Device Marking
STG
FDMS6673BZ
DS(on)
DS(on)
DS(on)
= 6.8 m at V
= 12.5 m at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
Power 56
GS
FDMS6673BZ
= -10 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
= -4.5 V, I
Device
D
D
= -15.2 A
D
D
T
= -11.2 A
®
C
D
= 25 °C unless otherwise noted
MOSFET
D
Parameter
Bottom
Power 56
Package
S
S
1
S
T
T
T
T
T
Pin 1
G
C
C
C
A
General Description
The FDMS6673BZ has been designed to minimize losses in load
switch applications. Advancements in both silicon and package
technologies have been combined to offer the lowest r
ESD protection.
Applications
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Load Switch in Notebook and Server
Notebook Battery Pack Power Management
Reel Size
13 ’’
D
D
D
D
(Note 1a)
(Note 1a)
(Note 1a)
5
6
7
8
Tape Width
12 mm
-55 to +150
Ratings
-15.2
-120
±25
-30
-28
-90
2.5
1.7
73
50
4
3
2
1
www.fairchildsemi.com
August 2009
3000 units
Quantity
S
G
S
S
DS(on)
Units
°C/W
°C
W
V
V
A
and

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FDMS6673BZ Summary of contents

Page 1

... Device Marking Device FDMS6673BZ FDMS6673BZ ©2009 Fairchild Semiconductor Corporation FDMS6673BZ Rev C3 ® MOSFET General Description The FDMS6673BZ has been designed to minimize losses in load = -15 switch applications. Advancements in both silicon and package = -11.2 A technologies have been combined to offer the lowest r D ESD protection. Applications ...

Page 2

... Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3: The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDMS6673BZ Rev °C unless otherwise noted J Test Conditions ...

Page 3

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 100 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMS6673BZ Rev °C unless otherwise noted J 4.0 3.5 = -4.5 V 3.0 PULSE DURATION = 80 s 2.5 DUTY CYCLE = 0.5% MAX 2 -3 1 ...

Page 4

... THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMS6673BZ Rev °C unless otherwise noted J 10000 1000 300 60 80 100 0.1 100 100 200 25 Figure 10 ...

Page 5

... Figure 13. Single Pulse Maximum Power Dissipation 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0004 - Figure 14. ©2009 Fairchild Semiconductor Corporation FDMS6673BZ Rev °C unless otherwise noted J SINGLE PULSE 125 C PULSE WIDTH (sec) SINGLE PULSE 125 C/W ...

Page 6

... Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMS6673BZ Rev C3 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDMS6673BZ Rev C3 FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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