FDFS2P106A Fairchild Semiconductor, FDFS2P106A Datasheet
FDFS2P106A
Specifications of FDFS2P106A
FDFS2P106A_NL
FDFS2P106A_NLTR
FDFS2P106A_NLTR
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FDFS2P106A Summary of contents
Page 1
... T =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) Reel Size 13’’ June 2001 = 110 –10 V DS(ON 140 –4.5 V DS(ON 125 Ratings Units – – – 1.6 1 0.9 – +150 Tape width Quantity 12mm 2500 units FDFS2P106A Rev B(W) ...
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... – –5 V – – –3 – 1.0 MHz V = – – – GEN V = –30V –3A – –1.3 A (Note Typ Max Units V –60 mV/ C –1 A 100 nA –100 nA –1 –1.6 – mV 110 m 112 140 150 192 714 8 –1.3 A –0.8 –1.2 V FDFS2P106A Rev B(W) ...
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... C J (Note 1a) (Note 1) is determined by the user's board design 125°C/W when mounted 0.02 in pad copper Min Typ Max Units 2 2 0.44 0.53 V 0.34 0.45 0.49 0.62 0.42 0.57 78 C/W 40 C/W c) 135°C/W when mounted on a minimum pad. FDFS2P106A Rev B(W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -3.0V -3.5V -4.0V -4.5V -6.0V -10V DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDFS2P106A Rev B( 1.2 ...
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... Figure 8. Capacitance Characteristics. 1.00E-01 1.00E-02 1.00E-03 1.00E- 1.00E-05 1.00E-06 1.00E-07 1.00E-08 0.6 0.7 0.8 0 Figure 10. Schottky Diode Reverse Current. 0 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE ( 125 REVERSE VOLTAGE ( ( 135 °C/W JA P(pk ( Duty Cycle 100 1000 FDFS2P106A Rev B(W) ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...