FDS6681Z Fairchild Semiconductor, FDS6681Z Datasheet
FDS6681Z
Specifications of FDS6681Z
FDS6681ZTR
Available stocks
Related parts for FDS6681Z
FDS6681Z Summary of contents
Page 1
... Reel Size 13’’ June 2005 R = 4.6 mΩ –10 V DS(ON 6.5 mΩ –4.5 V DS(ON) GS range (–25V) for battery applications GSS Ratings Units –30 ±25 –20 –105 2.5 1.2 1.0 °C –55 to +150 °C/W 50 °C/W 25 Tape width Quantity 12mm 2500 units FDS6681Z Rev B ( ...
Page 2
... GEN = –10V V = – – –5V Min Typ Max Units –30 V –26 mV/°C µA –1 µA ±10 –1 –1.8 – mV/°C 3.8 4.6 mΩ 5.2 6.5 5.0 6 7540 pF 1400 pF 1120 660 1060 ns 380 610 ns 185 260 nC 105 150 FDS6681Z Rev B (W) ...
Page 3
... A Test Conditions –2 – /dt = 100 A/µ determined by the user's board design. θCA b) 105°C/W when 2 mounted on a .04 in pad copper Min Typ Max Units –2.1 –0.7 –1.2 (Note 2) 125 94 (Note 2) c) 125°C/W when mounted on a minimum pad. FDS6681Z Rev B ( ...
Page 4
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -4.0V -4.5V -5.0V -6.0V -8.0V -10V DRAIN CURRENT ( -10A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6681Z Rev B (W) 105 10 1.2 ...
Page 5
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θ 125 °C/W θ (t) θ Duty Cycle 100 1000 FDS6681Z Rev B (W) 30 1000 ...
Page 6
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...