FDMS6681Z Fairchild Semiconductor, FDMS6681Z Datasheet

MOSFET P-CH 30V 21.1A POWER56

FDMS6681Z

Manufacturer Part Number
FDMS6681Z
Description
MOSFET P-CH 30V 21.1A POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS6681Z

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.2 mOhm @ 22.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
21.1A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
241nC @ 10V
Input Capacitance (ciss) @ Vds
10380pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0035 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
21.1 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS6681ZTR

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Part Number:
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Manufacturer:
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Quantity:
20 000
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FDMS6681Z
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Quantity:
60 000
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©2009 Fairchild Semiconductor Corporation
FDMS6681Z Rev.C4
FDMS6681Z
P-Channel PowerTrench
-30 V, -49 A, 3.2 m
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
Max r
Max r
Advanced Package and Silicon combination
for low r
HBM ESD protection level of 8kV typical(note 3)
MSL1 robust package design
RoHS Compliant
, T
JC
JA
Symbol
Device Marking
STG
FDMS6681Z
DS(on)
DS(on)
DS(on)
= 3.2 m at V
= 5.0 m at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
Power 56
= -10 V, I
= -4.5 V, I
FDMS6681Z
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
D
D
= -21.1 A
= -15.7 A
D
T
®
A
D
= 25 °C unless otherwise noted
MOSFET
D
Parameter
Bottom
Power 56
Package
S
S
1
S
T
T
T
T
T
General Description
The FDMS6681Z has been designed to minimize losses in load
switch applications. Advancements in both silicon and package
technologies have been combined to offer the lowest r
ESD protection.
Pin 1
C
C
A
C
A
G
Applications
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Load Switch in Notebook and Server
Notebook Battery Pack Power Management
= 25 °C
Reel Size
13 ’’
D
D
D
D
(Note 1a)
(Note 1a)
(Note 1a)
5
6
7
8
Tape Width
12 mm
-55 to +150
Ratings
-21.1
-116
±25
-30
-49
-90
1.7
2.5
50
73
4
3
2
1
www.fairchildsemi.com
3000 units
May 2009
S
Quantity
G
S
S
DS(on)
Units
°C/W
°C
W
V
V
A
and

Related parts for FDMS6681Z

FDMS6681Z Summary of contents

Page 1

... FDMS6681Z FDMS6681Z ©2009 Fairchild Semiconductor Corporation FDMS6681Z Rev.C4 ® MOSFET General Description = -21.1 A The FDMS6681Z has been designed to minimize losses in load D switch applications. Advancements in both silicon and package = -15 technologies have been combined to offer the lowest r ESD protection. Applications Load Switch in Notebook and Server ...

Page 2

... Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDMS6681Z Rev. °C unless otherwise noted J Test Conditions ...

Page 3

... T JUNCTION TEMPERATURE J Figure 3. Normalized On Resistance vs Junction Temperature 90 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMS6681Z Rev. °C unless otherwise noted 100 125 150 150 - 0.001 PULSE DURATION = 80 s DUTY CYCLE = 0 ...

Page 4

... THIS AREA IS 1 LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMS6681Z Rev. °C unless otherwise noted J 20000 10000 150 200 100 100 1000 1 ms ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 0.001 0.01 Figure 13. ©2009 Fairchild Semiconductor Corporation FDMS6681Z Rev. °C unless otherwise noted J SINGLE PULSE 125 C RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...

Page 6

... Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMS6681Z Rev.C4 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDMS6681Z Rev.C4 F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ ...

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