FDPF5N50T Fairchild Semiconductor, FDPF5N50T Datasheet - Page 4

MOSFET N-CH 500V 5A TO-220F

FDPF5N50T

Manufacturer Part Number
FDPF5N50T
Description
MOSFET N-CH 500V 5A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF5N50T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 2.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
640pF @ 25V
Power - Max
28W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5 A
Power Dissipation
28000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Fall Time
20 ns
Rise Time
22 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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FDP5N50 / FDPF5N50 Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Maximum Drain Current
0.01
1.2
1.1
1.0
0.9
0.8
0.1
30
10
-75
1
6
5
4
3
2
1
0
25
1
Operation in This Area
is Limited by R
vs. Temperature
- FDP5N50
-25
vs. Case Temperature
T
50
J
T
V
, Junction Temperature
C
DS
, Case Temperature
, Drain-Source Voltage [V]
10
DS(on)
25
75
75
100
*Notes:
DC
1. T
2. T
3. Single Pulse
10ms
100
[
*Notes:
1ms
o
C
J
C
1. V
2. I
[
= 150
= 25
o
]
125
100
C
D
125
GS
]
= 250
o
μ
C
o
s
= 0V
C
30
μ
A
μ
175
s
800
150
(Continued)
4
Figure 8. On-Resistance Variation
Figure 10. Maximum Safe Operating Area
0.01
3.0
2.5
2.0
1.5
1.0
0.5
0.1
30
10
1
-75
1
Operation in This Area
is Limited by R
vs. Temperature
-25
T
- FDPF5N50
J
V
, Junction Temperature
DS
, Drain-Source Voltage [V]
10
DS(on)
25
*Notes:
1. T
2. T
3. Single Pulse
DC
75
C
J
10ms
= 150
= 25
100
1ms
o
*Notes:
o
C
C
[
1. V
2. I
o
100
125
C
D
]
GS
μ
www.fairchildsemi.com
= 2.5A
s
= 10V
30
μ
s
175
800

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