FDPF5N50FT Fairchild Semiconductor, FDPF5N50FT Datasheet

MOSFET N-CH 500V 4.5A TO-220F

FDPF5N50FT

Manufacturer Part Number
FDPF5N50FT
Description
MOSFET N-CH 500V 4.5A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF5N50FT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.55 Ohm @ 2.25A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 25V
Power - Max
28W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.55 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4.5 A
Power Dissipation
28000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2007 Fairchild Semiconductor Corporation
FDP5N50F / FDPF5N50FT Rev. A1
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP5N50F / FDPF5N50FT
N-Channel MOSFET, FRFET
500V, 4.5A, 1.55Ω
Features
• R
• Low gate charge ( Typ. 11nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 1.25Ω ( Typ.)@ V
( Typ. 5pF)
G D S
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
TO-220
FDP Series
GS
= 10V, I
D
= 2.25A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted*
= 25
G
D
o
C)
S
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power factor-
correction.
TO-220F
FDPF Series
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP5N50F
FDP5N50F
G
0.67
62.5
4.5
2.7
1.4
0.5
18
85
-55 to +150
500
±30
233
300
4.5
8.5
4.5
FDPF5N50FT
FDPF5N50FT
S
D
December 2007
0.22
62.5
4.5*
2.7*
UniFET
18*
4.5
28
-
www.fairchildsemi.com
switching
Units
W/
Units
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

Related parts for FDPF5N50FT

FDPF5N50FT Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP5N50F / FDPF5N50FT Rev. A1 Description = 2.25A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 4.5A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP5N50F / FDPF5N50FT Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250µ ...

Page 3

... GS 1.6 1.4 1 Drain Current [A] D Figure 5. Capacitance Characteristics 1000 C iss = oss = rss = C gd 750 500 250 0 0 Drain-Source Voltage [V] DS FDP5N50F / FDPF5N50FT Rev. A1 Figure 2. Transfer Characteristics *Notes: 1. 250 µ s Pulse Test 0.1 10 Figure 4. Body Diode Forward Voltage 20V GS o *Note ...

Page 4

... Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve - FDP5N50F 3 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 0.003 -5 10 FDP5N50F / FDPF5N50FT Rev. A1 (Continued) Figure 8. Maximum Safe Operating Area 0.1 *Notes 250 µ 0.01 75 125 175 Figure 10. Maximum Drain Current ...

Page 5

... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve - FDPF5N50FT 10 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0.01 0.005 -5 10 FDP5N50F / FDPF5N50FT Rev. A1 (Continued Rectangular Pulse Duration [sec *Notes (t) = 4.5 C/W Max. θ Duty Factor ( θ www.fairchildsemi.com ...

Page 6

... FDP5N50F / FDPF5N50FT Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP5N50F / FDPF5N50FT Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP5N50F / FDPF5N50FT Rev. A1 TO-220 8 www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP5N50F / FDPF5N50FT Rev. A1 TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 –0.05 ±0.20 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP5N50F / FDPF5N50FT Rev. A1 FPS™ PDP-SPM™ ® FRFET Power220 Global Power Resource SM Power247 Green FPS™ POWEREDGE Green FPS™ e-Series™ ...

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