FQPF13N50CF Fairchild Semiconductor, FQPF13N50CF Datasheet - Page 3

• Manufacturer Part Number: FQPF13N50CF
• Description: MOSFET N-CH 500V 13A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQPF13N50CF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 540 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 2055pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.54 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 13 A
• Power Dissipation: 48000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP13N50CF / FQPF13N50CF Rev. A1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
Drain Current and Gate Voltage
1.5
1.0
0.5
3000
2500
2000
1500
1000
10
10
10
500
-1
1
0
10
0
10
-1
Top :
Bottom : 4.5 V
-1
0
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
5
V
V
DS
10
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
10
D
0
, Drain Current [A]
0
C
C
C
15
iss
oss
rss
20
V
GS
※
= 10V
C
C
C
1. 250µs Pulse Test
2. T
Notes :
iss
oss
rss
= C
= C
C
= C
25
= 25 ℃
10
10
gs
gd
ds
1
+ C
+ C
1
※
gd
gd
※
(C
Note : T
1. V
2. f = 1 MHz
Notes ;
ds
30
= shorted)
GS
V
= 0 V
GS
J
= 25 ℃
= 20V
35
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
-1
1
0
10
0.2
10
10
12
10
8
6
4
2
0
-1
1
0
2
0
25
o
C
Variation vs. Source Current
and Temperatue
150
0.4
o
C
150 ℃
10
4
V
V
Q
SD
GS
0.6
G
, Source-Drain voltage [V]
V
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
DS
25 ℃
= 400V
V
20
DS
-55
V
= 250V
DS
o
C
= 100V
6
0.8
30
※
1.0
1. V
2. 250µs Pulse Test
Notes :
DS
※
※
8
= 40V
1. V
2. 250µs Pulse Test
Note : I
Notes :
40
GS
= 0V
D
= 13A
1.2
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10
50
1.4