FDB2710 Fairchild Semiconductor, FDB2710 Datasheet - Page 4

MOSFET N-CH 250V 50A D2PAK

FDB2710

Manufacturer Part Number
FDB2710
Description
MOSFET N-CH 250V 50A D2PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDB2710

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
42.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
101nC @ 10V
Input Capacitance (ciss) @ Vds
7280pF @ 25V
Power - Max
260W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0363 Ohms @ 10 V
Forward Transconductance Gfs (max / Min)
63 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
50 A
Power Dissipation
260 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB2710TR

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Manufacturer
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Price
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FDB2710 Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
1.2
1.1
1.0
0.9
0.8
100
500
0.1
10
-100
1
1
vs. Temperature
Operation in This Area
is Limited by R
-50
T
J
Drain-Source Voltage, V
, Junction Temperature
10
10
10
10
0
* Notes :
-1
-2
-3
0
10
DS(on)
1. T
2. T
3. Single Pulse
10
-5
0.5
0.05
0.1
0.02
0.01
0.2
C
J
= 150
= 25
Single pulse
50
o
C
o
C
Figure 11. Transient Thermal Response Curve
10
100
-4
DS
* Notes :
[
1. V
2. I
100
o
[V]
100
10 ms
1ms
DC
C
D
150
]
GS
µ
= 250
s
= 0V
Rectangular Pulse Duration [sec]
10
µ
-3
A
200
400
(Continued)
10
4
-2
Figure 10. Maximum Drain Current
Figure 8. On-Resistance Variation
2.5
60
50
40
30
20
10
* Notes :
10
0
2
1
0
-100
1. Z
2. Duty Factor, D=t
3. T
25
P
-1
DM
vs. Temperature
θ
JM
vs. Case Temperature
JC
(t) = 0.48
- T
C
-50
= P
t
50
1
T
T
t
J
C
2
10
DM
, Junction Temperature [
, Case Temperature
o
C/W Max.
0
* Z
1
/t
0
θ
2
JC
75
(t)
50
10
1
100
100
[
o
C
* Notes :
]
1. V
2. I
o
125
C]
D
150
GS
= 25A
www.fairchildsemi.com
= 10V
150
200

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