FDA20N50F Fairchild Semiconductor, FDA20N50F Datasheet - Page 3

MOSFET N-CH 500V 22A TO-3PN

FDA20N50F

Manufacturer Part Number
FDA20N50F
Description
MOSFET N-CH 500V 22A TO-3PN
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDA20N50F

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
260 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
3390pF @ 25V
Power - Max
388W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.26 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
388000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDA20N50F
Manufacturer:
FAIRCHILD
Quantity:
4 000
Part Number:
FDA20N50F
Manufacturer:
ON/安森美
Quantity:
20 000
FDA20N50F Rev. A
Typical Performance Characteristics
6000
4500
3000
1500
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
0.5
80
0
1
0.1
0.1
0
V
GS
=
15.0 V
10.0 V
V
Drain Current and Gate Voltage
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
DS
C
DS
C
C
, Drain-Source Voltage [V]
rss
oss
iss
,Drain-Source Voltage[V]
I
D
, Drain Current [A]
25
1
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
V
GS
= 10V
1
*Notes:
1. 250
2. T
*Note: T
V
50
C
GS
= 25
(
µ
C ds = shorted
10
s Pulse Test
= 20V
*Note:
1. V
2. f = 1MHz
o
C
J
= 25
GS
= 0V
o
C
)
50
75
10
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
100
100
0.2
10
10
10
1
1
8
6
4
2
0
0.0
4
0
V
Variation vs. Source Current
10
and Temperature
SD
150
, Body Diode Forward Voltage [V]
V
o
Q
GS
C
V
V
V
g
,Gate-Source Voltage[V]
DS
DS
DS
, Total Gate Charge [nC]
150
0.5
20
= 100V
= 250V
= 400V
o
C
25
30
6
o
C
*Notes:
1. V
2. 250
25
*Notes:
1. V
2. 250
o
1.0
DS
*Note: I
40
C
GS
µ
= 20V
s Pulse Test
µ
= 0V
s Pulse Test
D
50
www.fairchildsemi.com
= 20A
1.5
8
60

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