FDP2710 Fairchild Semiconductor, FDP2710 Datasheet

MOSFET N-CH 250V 50A TO-220

FDP2710

Manufacturer Part Number
FDP2710
Description
MOSFET N-CH 250V 50A TO-220
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP2710

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
42.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
101nC @ 10V
Input Capacitance (ciss) @ Vds
7280pF @ 25V
Power - Max
260W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.042 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
50 A
Power Dissipation
260000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FDP2710
Manufacturer:
FSC
Quantity:
14 500
Price:
©2010 Fairchild Semiconductor Corporation
FDP2710 Rev. A1
FDP2710
250V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• PDP application
Absolute Maximum Ratings
Thermal Characteristics
V
V
I
I
E
dv/dt
P
T
T
R
R
D
DM
J,
L
DS
GS
AS
D
Symbol
Symbol
θJC
θJA
T
STG
Drain-Source Voltage
Gate-Source voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
G
D
S
TO-220
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
C
C
= 25°C)
= 100°C)
1
Description
• 50A, 250V, R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
• RoHS compliant
(Note 1)
(Note 2)
(Note 3)
DS(on)
Min
--
--
G
See Figure 9
-55 to +150
Ratings
= 36.3mΩ @V
± 30
31.3
250
145
260
300
4.5
2.1
50
D
S
Max
0.48
62.5
GS
= 10 V
August 2010
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
°C/W
°C/W
mJ
°C
°C
W
V
V
A
A
A
DS(on)

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FDP2710 Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2010 Fairchild Semiconductor Corporation FDP2710 Rev. A1 Description • 50A, 250V, R • Fast switching speed • Low gate charge • High performance trench technology for extremely low R • High power and current handling capability • ...

Page 2

... DD G ≤ 50A, di/dt ≤ 100A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP2710 Rev. A1 Package Reel Size TO-220 - T = 25°C unless otherwise noted C Conditions 250μA, T ...

Page 3

... C = shorted iss oss rss gd 6000 C iss C oss 3000 C rss Drain-Source Voltage [V] DS FDP2710 Rev. A1 Figure 2. Transfer Characteristics 250 100 10 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 150 100 10 = 20V Note : 100 125 150 Figure 6. Gate Charge Characteristics Note: 1 ...

Page 4

... Operation in This Area is Limited by R DS(on) * Notes : 0 150 Single Pulse 0. Drain-Source Voltage 0 0.2 0.1 0.05 0. 0.01 Single pulse - FDP2710 Rev. A1 (Continued) Figure 8. On-Resistance Variation 2 Notes : 250 μ -100 100 150 200 Figure 10. Maximum Drain Current 60 50 100 μ 1ms 100 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FDP2710 Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP2710 Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDP2710 Rev. A1 TO-220 7 www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP2710 Rev. A1 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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