FDA28N50F Fairchild Semiconductor, FDA28N50F Datasheet

MOSFET N-CH 500V 28A TO-3PN

FDA28N50F

Manufacturer Part Number
FDA28N50F
Description
MOSFET N-CH 500V 28A TO-3PN
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDA28N50F

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
175 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
105nC @ 10V
Input Capacitance (ciss) @ Vds
5387pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.175 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
28 A
Power Dissipation
310000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Price
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Manufacturer:
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©2008 Fairchild Semiconductor Corporation
FDA28N50F Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDA28N50F
N-Channel MOSFET
500V, 28A, 0.175Ω
Features
• R
• Low Gate Charge ( Typ. 80nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.140Ω ( Typ.)@ V
( Typ. 38pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
D
S
GS
= 10V, I
TO-3PN
D
T
= 14A
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted
= 25
o
C)
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Failchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These device are well suited for high
efficient switched mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
-55 to +150
Ratings
Ratings
2352
500
±30
112
310
300
0.24
2.5
S
D
28
17
28
31
15
0.4
40
November 2008
UniFET
www.fairchildsemi.com
switching
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
A
V
A
A
C
C
o
C
TM

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FDA28N50F Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FDA28N50F Rev. A Description = 14A These N-Channel enhancement mode power field effect D transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to ...

Page 2

... Starting ≤ 28A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDA28N50F Rev. A Package Reel Size TO-3PN - unless otherwise noted C Test Conditions I = 250µA, V ...

Page 3

... V = 10V GS 0.15 0. Drain Current [A] D Figure 5. Capacitance Characteristics 8000 C iss = oss = rss = C gd 6000 4000 2000 0 0 Drain-Source Voltage [V] DS FDA28N50F Rev. A Figure 2. Transfer Characteristics 150 100 10 µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 150 100 20V GS o *Note: T ...

Page 4

... Operation in This Area 1 is Limited by R DS(on) 0.1 0. Drain-Source Voltage [ 0.5 0.1 0.2 0.1 0.05 0.01 0.02 0.01 Single pulse 1E FDA28N50F Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 µ 250 A D 0.0 -75 75 125 175 Figure 10 ...

Page 5

... FDA28N50F Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDA28N50F Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDA28N50F Rev. A TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDA28N50F Rev. A FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...

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