BSZ440N10NS3 G Infineon Technologies, BSZ440N10NS3 G Datasheet - Page 7

• Manufacturer Part Number: BSZ440N10NS3 G
• Description: MOSFET N-CH 100V 18A TSDSON-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSZ440N10NS3 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.7V @ 12µA
• Gate Charge (qg) @ Vgs: 9.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 640pF @ 50V
• Power - Max: 29W
• Mounting Type: Surface Mount
• Package / Case: 8-TSDSON
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.044 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.3 A
• Power Dissipation: 29 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSZ440N10NS3 G; BSZ440N10NS3 GINTR; SP000482442

13 Avalanche characteristics
I
15 Drain-source breakdown voltage
V
100
110
105
100
t
10
95
90
1
0.1
-60
R
T
T
I
-20
1
20
t
T
AV
j
10
60
[°C]
[µs]
100
100
140
1000
180
14 Typ. gate charge
V
16 Gate charge waveforms
Q
V
10
V
Q
8
6
4
2
0
0
V
I
Q
2
Q
Q
gate
g
Q
4
[nC]
Q
BSZ440N10NS3 G
6
Q
g ate
8