IPD80N04S3-06 Infineon Technologies, IPD80N04S3-06 Datasheet

MOSFET N-CH 40V 90A TO252-3

IPD80N04S3-06

Manufacturer Part Number
IPD80N04S3-06
Description
MOSFET N-CH 40V 90A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD80N04S3-06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.2 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 52µA
Gate Charge (qg) @ Vgs
47nC @ 10V
Input Capacitance (ciss) @ Vds
3250pF @ 25V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
100 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD80N04S3-06
IPD80N04S3-06TR
SP000261220

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD80N04S3-06
Manufacturer:
NUVOTON
Quantity:
1 001
Part Number:
IPD80N04S3-06
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPD80N04S3-06
®
-T Power-Transistor
2)
Package
PG-TO252-3-11
j
=25 °C, unless otherwise specified
Symbol
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
QN0406
stg
T
T
V
T
I
T
D
C
C
C
C
GS
=80 A
page 1
=25°C, V
=100 °C,
=25 °C
=25 °C
=10 V
Conditions
2)
GS
Product Summary
V
R
I
=10V
D
DS
DS(on),max
1)
-55 ... +175
55/175/56
Value
320
125
±20
100
90
71
PG-TO252-3-11
IPD80N04S3-06
5.2
40
90
2007-07-09
Unit
A
mJ
V
W
°C
V
m
A

Related parts for IPD80N04S3-06

IPD80N04S3-06 Summary of contents

Page 1

... Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.0 Product Summary DS(on),max I D Marking QN0406 Symbol Conditions =25°C, V =10V =100 ° = =25 °C D,pulse = =25 °C tot stg page 1 IPD80N04S3- 5 PG-TO252-3-11 Value Unit 320 125 mJ ±20 V 100 W -55 ... +175 °C 55/175/56 2007-07-09 ...

Page 2

... Rev. 1.0 Symbol Conditions R thJC R minimal footprint thJA cooling area =25 °C, unless otherwise specified (BR)DSS =52 µA GS(th = DSS T =25 ° = =125 ° = GSS = =80 A DS(on page 2 IPD80N04S3-06 Values min. typ. max 1 2.1 3.0 4 100 = 100 - 4.1 5.2 Unit K µA nA mΩ 2007-07-09 ...

Page 3

... d(off = = plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ 1.5K/W the chip is able to carry 101A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPD80N04S3-06 Values min. typ. max. - 2500 3250 = 660 - 100 - = 6 Unit pF 860 150 - 320 1.3 ...

Page 4

... parameter 1000 100 Rev. 1.0 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPD80N04S3- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-07-09 ...

Page 5

... T j 320 280 240 200 160 120 Rev. 1.0 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 6 5 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 9 -55 ° ° 175 ° -60 [V] page 5 IPD80N04S3- ° 100 T [° 100 120 140 180 2007-07-09 ...

Page 6

... V SD Rev. 1.0 10 Typ. capacitances 520 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 10 25 °C 1 0.8 1 1.2 1.4 [V] page 6 IPD80N04S3- MHz [ j(start) 150 °C 100 ° 100 t [µs] AV Ciss Coss Crss °C 1000 2007-07-09 ...

Page 7

... I D 600 500 20 A 400 300 40 A 200 100 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.0 14 Typ. drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPD80N04S3- -60 - 100 T [° 140 180 Q gate 2007-07-09 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPD80N04S3-06 2007-07-09 ...

Page 9

... Revision History Version Rev. 1.0 Date page 9 IPD80N04S3-06 Changes 2007-07-09 ...

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