FDZ391P Fairchild Semiconductor, FDZ391P Datasheet

MOSFET P-CH 20V 3A 6-WLCSP

FDZ391P

Manufacturer Part Number
FDZ391P
Description
MOSFET P-CH 20V 3A 6-WLCSP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDZ391P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
85 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
1065pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
6-WLCSP
Configuration
Single Dual Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.085 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3 A
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDZ391PTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDZ391P
Manufacturer:
Fairchild Semiconductor
Quantity:
135
©2008 Fairchild Semiconductor Corporation
FDZ391P Rev.B1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDZ391P
P-Channel 1.5 V PowerTrench
-20 V, -3 A, 85 mΩ
Features
V
V
I
P
T
R
R
D
J
DS
GS
D
θJA
θJA
, T
Max r
Max r
Max r
Occupies only 1.5 mm
Ultra-thin package: less than 0.4 mm height when mounted
to PCB
RoHS Compliant
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
6
D
= 85 mΩ at V
= 123 mΩ at V
= 200 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
BOTTOM
D
S
2
of PCB area
S
GS
S
GS
GS
= -4.5 V, I
= -2.5 V, I
= -1.5 V, I
FDZ391P
-Pulsed
G
Device
Pin 1
D
D
D
= -1 A
= -1 A
= -1 A
T
A
= 25 °C unless otherwise noted
Parameter
WL-CSP Thin
Package
T
1
T
T
A
A
A
= 25 °C
= 25 °C
= 25 °C
TOP
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench process
with state of the art "low pitch" Thin WLCSP packaging process,
the FDZ391P minimizes both PCB space and r
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low r
Applications
®
Battery management
Load switch
Battery protection
Thin
Reel Size
7 ’’
WL-CSP MOSFET
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
G
Tape Width
8 mm
-55 to +150
Ratings
DS(on)
133
-20
-15
1.9
0.9
±8
65
-3
S
D
.
November 2008
www.fairchildsemi.com
5000 units
Quantity
DS(on)
Units
°C/W
. This
°C
W
V
V
A
tm

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FDZ391P Summary of contents

Page 1

... Designed on Fairchild's advanced 1.5 V PowerTrench process = - with state of the art "low pitch" Thin WLCSP packaging process the FDZ391P minimizes both PCB space and r advanced WLCSP MOSFET embodies a breakthrough packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile ...

Page 2

... Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes determined with the device mounted θJA the user's board design. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDZ391P Rev. °C unless otherwise noted J Test Conditions = -250 µ -250 µA, referenced to 25 °C ...

Page 3

... Figure 3. Normalized On Resistance vs Junction Temperature 15 PULSE DURATION = 300 DUTY CYCLE = 2.0% MAX 125 - 0.5 1.0 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDZ391P Rev. °C unless otherwise noted J 2 1.6 1 1.0 µ s 0.8 2.5 3.0 3.5 4.0 75 100 125 150 ( ...

Page 4

... GATE CHARGE(nC) g Figure 7. Gate Charge Characteristics 2 C/W θ CASE TEMPERATURE A Figure 9. Maximum Continuous Drain Current vs Ambient Temperature 0 Figure 11. Single Pulse Maximum Power Dissipation FDZ391P Rev. °C unless otherwise noted - - -4 100 125 150 PULSE WIDTH (sec) 4 2000 1000 C iss C oss 100 MHz C ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0. FDZ391P Rev. °C unless otherwise noted J SINGLE PULSE 133 C/W θ RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θ 100 1000 10 www ...

Page 6

... Dimensional Outline and Pad Layout FDZ391P Rev.B1 6 www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDZ391P Rev.B1 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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