BSC130P03LS G Infineon Technologies, BSC130P03LS G Datasheet - Page 4
![MOSFET P-CH 30V 22.5A TDSON-8](/photos/29/5/290586/tson8_sml.jpg)
BSC130P03LS G
Manufacturer Part Number
BSC130P03LS G
Description
MOSFET P-CH 30V 22.5A TDSON-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSC130P03LS_G.pdf
(9 pages)
Specifications of BSC130P03LS G
Package / Case
8-PowerTDFN
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 22.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
22.5A
Vgs(th) (max) @ Id
2.2V @ 150µA
Gate Charge (qg) @ Vgs
73.1nC @ 10V
Input Capacitance (ciss) @ Vds
3670pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
13 m Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
- 22.5 A
Power Dissipation
69 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package
SuperSO8
Vds (max)
-30.0 V
Rds (on) (max) (@10v)
13.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSC130P03LS G
BSC130P03LS GINTR
SP000359666
BSC130P03LS GINTR
SP000359666