BSP373 L6327 Infineon Technologies, BSP373 L6327 Datasheet

BSP373 L6327

Manufacturer Part Number

BSP373 L6327

Description

MOSFET N-CH 100V 1.7A SOT-223

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Datasheet

1.BSP373_L6327.pdf (8 pages)

Specifications of BSP373 L6327

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

300 mOhm @ 1.7A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

1.7A

Vgs(th) (max) @ Id

4V @ 1mA

Input Capacitance (ciss) @ Vds

550pF @ 25V

Power - Max

1.8W

Mounting Type

Surface Mount

Minimum Operating Temperature

- 55 C

Configuration

Single Dual Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.3 Ohm @ 10 V

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

1.7 A @ Ta=28C

Power Dissipation

1800 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

BSP373 L6327
BSP373L6327INTR
BSP373L6327XT
SP000087065

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SIPMOS

• N channel

• Enhancement mode

• Avalanche rated

• V

•

Rev 1.2

Type

BSP 373

Type

BSP 373

Maximum Ratings

Parameter

Continuous drain current

DC drain current, pulsed

Avalanche energy, single pulse

L = 23.3 mH, T

Gate source voltage

Power dissipation

Pb-free lead plating; RoHS compliant available

GS(th)

= 1.7 A, V

= 28 ˚C

= 25 ˚C

= 2.1 ... 4.0 V

Small-Signal Transistor

= 25 V, R

= 25 ˚C

100 V

RoHS compliant

Yes

= 25

1.7 A

Ω

0.3

Tape and Reel Information

L6327: 1000 pcs/reel

DS(on)

Ω

Symbol

Dpuls

tot

Package

PG-SOT-223

Pin 1

Values

Pin 2

Marking

BSP 373

1.7

6.8

1.8

Pin 3

BSP 373

2007-02-08

Unit

Pin 4

Related parts for BSP373 L6327

BSP373 L6327 Summary of contents

Page 1

SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • 2.1 ... 4.0 V GS(th) • Pb-free lead plating; RoHS compliant available Type V DS BSP 373 100 V Type RoHS compliant BSP 373 ...

Page 2

Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance ≥ 1 DS(on)max, D Input capacitance MHz GS DS Output ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current ˚C A Inverse diode direct current,pulsed ˚C A Inverse diode forward voltage 1 ...

Page 5

Power dissipation = ƒ tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area I = parameter : D ...

Page 6

Typ. output characteristics = ƒ parameter µ 3 tot 3 2.8 2.4 2.0 1.6 1.2 ...

Page 7

Drain-source on-resistance = ƒ (on) j parameter 1 0.75 Ω 0.65 R 0.60 DS (on) 0.55 0.50 0.45 0.40 98% 0.35 0.30 0.25 typ 0.20 0.15 ...

Page 8

T Avalanche energy E AS parameter 1 Ω 23 ...

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