BSP373 L6327 Infineon Technologies, BSP373 L6327 Datasheet - Page 2

• Manufacturer Part Number: BSP373 L6327
• Description: MOSFET N-CH 100V 1.7A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP373 L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.7 A @ Ta=28C
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSP373 L6327; BSP373L6327INTR; BSP373L6327XT; SP000087065

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
Electrical Characteristics, at T
Rev 1.2
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Thermal resistance, junction-soldering point
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-Source on-state resistance
V
GS
GS =
DS
DS
GS
GS
= 0 V, I
= 100 V, V
= 100 V, V
= 20 V, V
= 10 V, I
V
DS,
I
D
D
= 1 mA
D
= 0.25 mA, T
DS
GS
GS
= 1.7 A
= 0 V
= 0 V, T
= 0 V, T
j
j
j
= 25 ˚C
= 125 ˚C
= 0 ˚C
j
= 25˚C, unless otherwise specified
2
1)
copper area for drain connection
2
Symbol
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
R
Symbol
T
T
R
j
stg
thJA
thJS
min.
-
-
-
-
100
2.1
Values
typ.
-
3
0.1
10
10
0.16
-55 ... + 150
-55 ... + 150
55 / 150 / 56
Values
≤
≤
E
70
10
max.
-
4
1
100
100
0.3
BSP 373
2007-02-08
Unit
˚C
K/W
Unit
V
µA
nA
Ω