FDD6690A Fairchild Semiconductor, FDD6690A Datasheet - Page 3

• Manufacturer Part Number: FDD6690A
• Description: MOSFET N-CH 30V 12A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6690A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 5V
• Input Capacitance (ciss) @ Vds: 1230pF @ 15V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 m Ohms
• Forward Transconductance Gfs (max / Min): 47 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 3.3 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6690ATR

Notes:
1. R
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. Maximum current is calculated as:
Electrical Characteristics
Symbol
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
S
rr
the drain pins. R
where P
SD
rr
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
D
is maximum power dissipation at T
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
JC
is guaranteed by design while R
Parameter
R
P
C
DS(ON)
D
a) R
= 25°C and R
1in
JA
CA
2
pad of 2 oz copper
= 45°C/W when mounted on a
is determined by the user's board design.
DS(on)
is at T
T
A
Scale 1 : 1 on letter size paper
= 25°C unless otherwise noted
I
F
J(max)
GS
= 12 A,
Test Conditions
= 0 V,
and V
GS
= 10V. Package current limitation is 21A
I
d
S
iF
= 2.3 A
/d
t
= 100 A/µs
(Note 2)
b) R
Min Typ Max Units
on a minimum pad.
JA
= 96°C/W when mounted
0.76
24
13
2.3
1.2
FDD6690A Rev. EW)
nS
nC
A
V